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University of Illinois at Urbana-Champaign
Experimental investigation of hot electron and related effects in gallium(aluminum)arsenide devices
Abstract
dc:descriptionThe advance of crystal growth technology, specifically metalorganic chemical vapor deposition (MOCVD) as it relates to this work, has made it practical to manufacture an entirely new class of heterojunction devices. Physical properties of semiconductor heterojunction devices such as resonant tunneling and ballistic transport and various hot electron effects discussed within, have been moved from the status of academic curiosity to physically realizable, useful effects.
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Electrical and Computer Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2011
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Higman, Ted King
- Contributors dc:contributor
-
- Coleman, James J.
Subjects
dc:subject × 1Rights
dc:rights- Statement dc:rights
-
- Copyright 1989 Higman, Ted King
- Language dc:language
- eng
Identifiers
dc:identifier.*- Identifier
-
AAI8924837
(UMI)AAI8924837 - OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/22480