{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/22480"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/22480","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Experimental investigation of hot electron and related effects in gallium(aluminum)arsenide devices","abstract":"The advance of crystal growth technology, specifically metalorganic chemical vapor deposition (MOCVD) as it relates to this work, has made it practical to manufacture an entirely new class of heterojunction devices. Physical properties of semiconductor heterojunction devices such as resonant tunneling and ballistic transport and various hot electron effects discussed within, have been moved from the status of academic curiosity to physically realizable, useful effects.","abstract_html":"The advance of crystal growth technology, specifically metalorganic chemical vapor deposition (MOCVD) as it relates to this work, has made it practical to manufacture an entirely new class of heterojunction devices. Physical properties of semiconductor heterojunction devices such as resonant tunneling and ballistic transport and various hot electron effects discussed within, have been moved from the status of academic curiosity to physically realizable, useful effects.","abstract_has_math":false,"creators":["Higman, Ted King"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical and Computer Engineering","degree_department":null,"school":null,"contributors":["Coleman, James J."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-05-07T13:41:13Z","date_published":"2011-05-07T13:41:13Z","updated_at":"2026-07-22T22:25:20Z","subjects":["Engineering, Electronics and Electrical"],"languages":["eng"],"rights":["Copyright 1989 Higman, Ted King"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI8924837","(UMI)AAI8924837"],"render_values":[{"text":"AAI8924837","href":null,"code":true},{"text":"(UMI)AAI8924837","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/22480","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Coleman, James J."]},{"key":"dc:creator","label":"Author","values":["Higman, Ted King"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-05-07T13:41:13Z","10000-01-01","1989"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical and Computer Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 1989 Higman, Ted King"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI8924837","(UMI)AAI8924837","http://hdl.handle.net/2142/22480"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["The advance of crystal growth technology, specifically metalorganic chemical vapor deposition (MOCVD) as it relates to this work, has made it practical to manufacture an entirely new class of heterojunction devices. Physical properties of semiconductor heterojunction devices such as resonant tunneling and ballistic transport and various hot electron effects discussed within, have been moved from the status of academic curiosity to physically realizable, useful effects.","The theoretical and experimental results from the heterostructure hot electron diode (HHED), a two-terminal device which exhibits S-shaped negative differential resistance, are presented, which shed new light on the transport processes involved in the tunneling, resonant tunneling and thermionic emission processes in semiconductor heterostructures. In support of some of the conclusions about the heterostructure hot electron diode, experiments involving transport of two-dimensional electrons in the negative resistance field effect transistor (NERFET) in high crossed electric and magnetic fields are also presented. In addition, pertinent facts relating to the fabrication and test of these devices are presented in order to obtain a clear picture of the simple techniques used to obtain the data contained herein.","Made available in DSpace on 2011-05-07T13:41:13Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 8924837.pdf: 2473551 bytes, checksum: 1d0a702ce28b4d2bdda52447d6080f60 (MD5) Previous issue date: 1989","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:57:54Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:27:11-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"]},{"key":"dc:title","label":"Title","values":["Experimental investigation of hot electron and related effects in gallium(aluminum)arsenide devices"]}]}],"canonical_facts":{"dc:contributor":["Coleman, James J."],"dc:creator":["Higman, Ted King"],"dc:date":["2011-05-07T13:41:13Z","10000-01-01","1989"],"dc:description":["The advance of crystal growth technology, specifically metalorganic chemical vapor deposition (MOCVD) as it relates to this work, has made it practical to manufacture an entirely new class of heterojunction devices. Physical properties of semiconductor heterojunction devices such as resonant tunneling and ballistic transport and various hot electron effects discussed within, have been moved from the status of academic curiosity to physically realizable, useful effects.","The theoretical and experimental results from the heterostructure hot electron diode (HHED), a two-terminal device which exhibits S-shaped negative differential resistance, are presented, which shed new light on the transport processes involved in the tunneling, resonant tunneling and thermionic emission processes in semiconductor heterostructures. In support of some of the conclusions about the heterostructure hot electron diode, experiments involving transport of two-dimensional electrons in the negative resistance field effect transistor (NERFET) in high crossed electric and magnetic fields are also presented. In addition, pertinent facts relating to the fabrication and test of these devices are presented in order to obtain a clear picture of the simple techniques used to obtain the data contained herein.","Made available in DSpace on 2011-05-07T13:41:13Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 8924837.pdf: 2473551 bytes, checksum: 1d0a702ce28b4d2bdda52447d6080f60 (MD5) Previous issue date: 1989","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:57:54Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:27:11-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"],"dc:identifier":["AAI8924837","(UMI)AAI8924837","http://hdl.handle.net/2142/22480"],"dc:language":["eng"],"dc:rights":["Copyright 1989 Higman, Ted King"],"dc:subject":["Engineering, Electronics and Electrical"],"dc:title":["Experimental investigation of hot electron and related effects in gallium(aluminum)arsenide devices"],"dc:type":["text"],"thesis:degree_discipline":["Electrical and Computer Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:20Z"}