Melt motion in floating-zone process for single crystal growth with an axial magnetic field

The bulk flow of molten silicon in the floating-zone process with an applied axial magnetic field, for a dislocation-free single crystal, is studied by using asymptotic expansion. Centrifugal force, crystal growth speed, buoyancy, thermocapillarity and electromagnetic body force are the driving forces involved in the floating-zone process for growing single crystal. The strong, DC magnetic field eliminates the inertial effect of the melt motion and confines the viscous effect in the thin boundary layers; the modified Navier-Stokes equations are linearlized by the presence of the axial magnetic field. With the shape of the molten silicon pool calculated through the force balance on the free surface, the individual motion driven by each factor is investigated separately.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Engineering, Mechanical

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Lie, Kun-Ho

• Engineering, Mechanical
• Engineering, Materials Science

Statement dc:rights

• Copyright 1989 Lie, Kun-Ho

Language dc:language

eng

Identifier

AAI9010933
(UMI)AAI9010933

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/22360