{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/22360"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/22360","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Melt motion in floating-zone process for single crystal growth with an axial magnetic field","abstract":"The bulk flow of molten silicon in the floating-zone process with an applied axial magnetic field, for a dislocation-free single crystal, is studied by using asymptotic expansion. Centrifugal force, crystal growth speed, buoyancy, thermocapillarity and electromagnetic body force are the driving forces involved in the floating-zone process for growing single crystal. The strong, DC magnetic field eliminates the inertial effect of the melt motion and confines the viscous effect in the thin boundary layers; the modified Navier-Stokes equations are linearlized by the presence of the axial magnetic field. With the shape of the molten silicon pool calculated through the force balance on the free surface, the individual motion driven by each factor is investigated separately.","abstract_html":"The bulk flow of molten silicon in the floating-zone process with an applied axial magnetic field, for a dislocation-free single crystal, is studied by using asymptotic expansion. Centrifugal force, crystal growth speed, buoyancy, thermocapillarity and electromagnetic body force are the driving forces involved in the floating-zone process for growing single crystal. The strong, DC magnetic field eliminates the inertial effect of the melt motion and confines the viscous effect in the thin boundary layers; the modified Navier-Stokes equations are linearlized by the presence of the axial magnetic field. With the shape of the molten silicon pool calculated through the force balance on the free surface, the individual motion driven by each factor is investigated separately.","abstract_has_math":false,"creators":["Lie, Kun-Ho"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Engineering, Mechanical","degree_department":null,"school":null,"contributors":[],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-05-07T13:37:22Z","date_published":"2011-05-07T13:37:22Z","updated_at":"2026-07-22T22:25:19Z","subjects":["Engineering, Mechanical","Engineering, Materials Science"],"languages":["eng"],"rights":["Copyright 1989 Lie, Kun-Ho"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9010933","(UMI)AAI9010933"],"render_values":[{"text":"AAI9010933","href":null,"code":true},{"text":"(UMI)AAI9010933","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/22360","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:creator","label":"Author","values":["Lie, Kun-Ho"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-05-07T13:37:22Z","10000-01-01","1989"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Engineering, Mechanical","Engineering, Materials Science"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Mechanical","Engineering, Materials Science"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 1989 Lie, Kun-Ho"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9010933","(UMI)AAI9010933","http://hdl.handle.net/2142/22360"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["The bulk flow of molten silicon in the floating-zone process with an applied axial magnetic field, for a dislocation-free single crystal, is studied by using asymptotic expansion. Centrifugal force, crystal growth speed, buoyancy, thermocapillarity and electromagnetic body force are the driving forces involved in the floating-zone process for growing single crystal. The strong, DC magnetic field eliminates the inertial effect of the melt motion and confines the viscous effect in the thin boundary layers; the modified Navier-Stokes equations are linearlized by the presence of the axial magnetic field. With the shape of the molten silicon pool calculated through the force balance on the free surface, the individual motion driven by each factor is investigated separately.","Conductive and convective heat transfer are both studied and later compared to find that the convection does not alter the temperature distribution in the melt significantly. Finite differences, boundary elements and numerical integration are the numerical schemes used in this problem.","Made available in DSpace on 2011-05-07T13:37:22Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9010933.pdf: 5169354 bytes, checksum: f3841a8a91e9945fd1644478b7dce295 (MD5) Previous issue date: 1989","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:57:05Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:26:44-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"]},{"key":"dc:title","label":"Title","values":["Melt motion in floating-zone process for single crystal growth with an axial magnetic field"]}]}],"canonical_facts":{"dc:creator":["Lie, Kun-Ho"],"dc:date":["2011-05-07T13:37:22Z","10000-01-01","1989"],"dc:description":["The bulk flow of molten silicon in the floating-zone process with an applied axial magnetic field, for a dislocation-free single crystal, is studied by using asymptotic expansion. Centrifugal force, crystal growth speed, buoyancy, thermocapillarity and electromagnetic body force are the driving forces involved in the floating-zone process for growing single crystal. The strong, DC magnetic field eliminates the inertial effect of the melt motion and confines the viscous effect in the thin boundary layers; the modified Navier-Stokes equations are linearlized by the presence of the axial magnetic field. With the shape of the molten silicon pool calculated through the force balance on the free surface, the individual motion driven by each factor is investigated separately.","Conductive and convective heat transfer are both studied and later compared to find that the convection does not alter the temperature distribution in the melt significantly. Finite differences, boundary elements and numerical integration are the numerical schemes used in this problem.","Made available in DSpace on 2011-05-07T13:37:22Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9010933.pdf: 5169354 bytes, checksum: f3841a8a91e9945fd1644478b7dce295 (MD5) Previous issue date: 1989","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:57:05Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:26:44-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"],"dc:identifier":["AAI9010933","(UMI)AAI9010933","http://hdl.handle.net/2142/22360"],"dc:language":["eng"],"dc:rights":["Copyright 1989 Lie, Kun-Ho"],"dc:subject":["Engineering, Mechanical","Engineering, Materials Science"],"dc:title":["Melt motion in floating-zone process for single crystal growth with an axial magnetic field"],"dc:type":["text"],"thesis:degree_discipline":["Engineering, Mechanical","Engineering, Materials Science"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:19Z"}