Optical properties of confined and unconfined excitons in semiconductor quantum heterostructures

In this thesis the electronic and optical properties of confined and unconfined excitons in semiconductor quantum heterostructures are investigated. We use multiband effective mass theory to solve the subband structure in which valence band mixing is properly taking into account. With the aid of supercomputer and recently developed k-space sampling technique we can deal with both discrete exciton states and exciton continuum states properly and hence the photoabsorption coefficient. These techniques are applied to calculate the electroabsorption, resonant Raman scattering in GaAs quantum wells, and absorption of above barrier excitons in both type I and type II heterostructures. We find that the valence band mixing is important in explaining the fine structures in the spectrum for the electroabsorption and PLE for above barrier excitons. In the RRS profile, the exciton continuum states are necessary in order to explain the experimental data.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Physics

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Wen, Guozhong

Contributors dc:contributor

• Chang, Yia-Chung

• Physics, Condensed Matter

Statement dc:rights

• Copyright 1994 Wen, Guozhong

Language dc:language

eng

Identifier

AAI9512592
(UMI)AAI9512592

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/22061