{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/22061"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/22061","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Optical properties of confined and unconfined excitons in semiconductor quantum heterostructures","abstract":"In this thesis the electronic and optical properties of confined and unconfined excitons in semiconductor quantum heterostructures are investigated. We use multiband effective mass theory to solve the subband structure in which valence band mixing is properly taking into account. With the aid of supercomputer and recently developed k-space sampling technique we can deal with both discrete exciton states and exciton continuum states properly and hence the photoabsorption coefficient. These techniques are applied to calculate the electroabsorption, resonant Raman scattering in GaAs quantum wells, and absorption of above barrier excitons in both type I and type II heterostructures. We find that the valence band mixing is important in explaining the fine structures in the spectrum for the electroabsorption and PLE for above barrier excitons. In the RRS profile, the exciton continuum states are necessary in order to explain the experimental data.","abstract_html":"In this thesis the electronic and optical properties of confined and unconfined excitons in semiconductor quantum heterostructures are investigated. We use multiband effective mass theory to solve the subband structure in which valence band mixing is properly taking into account. With the aid of supercomputer and recently developed k-space sampling technique we can deal with both discrete exciton states and exciton continuum states properly and hence the photoabsorption coefficient. These techniques are applied to calculate the electroabsorption, resonant Raman scattering in GaAs quantum wells, and absorption of above barrier excitons in both type I and type II heterostructures. We find that the valence band mixing is important in explaining the fine structures in the spectrum for the electroabsorption and PLE for above barrier excitons. In the RRS profile, the exciton continuum states are necessary in order to explain the experimental data.","abstract_has_math":false,"creators":["Wen, Guozhong"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Physics","degree_department":null,"school":null,"contributors":["Chang, Yia-Chung"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-05-07T13:27:43Z","date_published":"2011-05-07T13:27:43Z","updated_at":"2026-07-22T22:25:19Z","subjects":["Physics, Condensed Matter"],"languages":["eng"],"rights":["Copyright 1994 Wen, Guozhong"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9512592","(UMI)AAI9512592"],"render_values":[{"text":"AAI9512592","href":null,"code":true},{"text":"(UMI)AAI9512592","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/22061","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Chang, Yia-Chung"]},{"key":"dc:creator","label":"Author","values":["Wen, Guozhong"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-05-07T13:27:43Z","10000-01-01","1994"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Physics"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Physics, Condensed Matter"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 1994 Wen, Guozhong"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9512592","(UMI)AAI9512592","http://hdl.handle.net/2142/22061"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["In this thesis the electronic and optical properties of confined and unconfined excitons in semiconductor quantum heterostructures are investigated. We use multiband effective mass theory to solve the subband structure in which valence band mixing is properly taking into account. With the aid of supercomputer and recently developed k-space sampling technique we can deal with both discrete exciton states and exciton continuum states properly and hence the photoabsorption coefficient. These techniques are applied to calculate the electroabsorption, resonant Raman scattering in GaAs quantum wells, and absorption of above barrier excitons in both type I and type II heterostructures. We find that the valence band mixing is important in explaining the fine structures in the spectrum for the electroabsorption and PLE for above barrier excitons. In the RRS profile, the exciton continuum states are necessary in order to explain the experimental data.","Made available in DSpace on 2011-05-07T13:27:43Z (GMT). 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We use multiband effective mass theory to solve the subband structure in which valence band mixing is properly taking into account. With the aid of supercomputer and recently developed k-space sampling technique we can deal with both discrete exciton states and exciton continuum states properly and hence the photoabsorption coefficient. These techniques are applied to calculate the electroabsorption, resonant Raman scattering in GaAs quantum wells, and absorption of above barrier excitons in both type I and type II heterostructures. We find that the valence band mixing is important in explaining the fine structures in the spectrum for the electroabsorption and PLE for above barrier excitons. In the RRS profile, the exciton continuum states are necessary in order to explain the experimental data.","Made available in DSpace on 2011-05-07T13:27:43Z (GMT). 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