Thermal and photochemical vapor deposition of aluminum nitride and gallium nitride

Currently, the optical spectrum of the III-V compound semiconductors has been largely confined, with a few notable exceptions, to the visible red-orange to infrared portion of the electromagnetic spectrum ($\sim$650 nm to $\sim$1550 nm). The AlGaN material system may be able to extend this range to the visible green, blue and even ultraviolet regions. The current status of work on the column III-nitride system of compound semiconductors is reviewed with special attention given to the material challenges presently limiting sophisticated device development. Furthermore, the organometallic vapor phase epitaxy (OMVPE) method of growing these materials is discussed in detail in terms of process physics and reactor design and operation.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical and Computer Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Alwan, James Jamil

Contributors dc:contributor

• Eden, James G.

• Engineering, Electronics and Electrical
• Engineering, Materials Science

Statement dc:rights

• Copyright 1994 Alwan, James Jamil

Language dc:language

eng

Identifier

AAI9512285
(UMI)AAI9512285

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/21529