Semiconductor electronic band alignment at heterojunctions of wurtzite aluminum nitride, gallium nitride, and indium nitride

In this thesis the band alignments for wurtzite (0001) heterojunctions of AlN, GaN, and InN semiconductors are measured by x-ray photoemission spectroscopy. The bands alignments are all found to be Type I, and the valence-band discontinuities are found to be:(UNFORMATTED TABLE OR EQUATION FOLLOWS)$$\vbox{\halign{#\hfil&&\qquad #\hfil\cr &$\rm\Delta E\sb{v} (eV)\cr\cr GaN on AlN &0.60 \pm$ 0.24\cr AlN on GaN &0.57 $\pm$ 0.22\cr InN on GaN &0.93 $\pm$ 0.25\cr GaN on InN &0.59 $\pm$ 0.24\cr InN on AlN &1.71 $\pm$ 0.20\cr AlN on InN &1.32 $\pm$ 0.14\cr}}$$(TABLE/EQUATION ENDS)

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Physics

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Martin, Gregory Allen

Contributors dc:contributor

• Wolfe, J.P.

• Engineering, Electronics and Electrical
• Physics, Condensed Matter
• Engineering, Materials Science

Statement dc:rights

• Copyright 1996 Martin, Gregory Allen

Language dc:language

eng

Identifier

9780591199352
AAI9712370
(UMI)AAI9712370

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/21357