{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/21357"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/21357","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Semiconductor electronic band alignment at heterojunctions of wurtzite aluminum nitride, gallium nitride, and indium nitride","abstract":"In this thesis the band alignments for wurtzite (0001) heterojunctions of AlN, GaN, and InN semiconductors are measured by x-ray photoemission spectroscopy. The bands alignments are all found to be Type I, and the valence-band discontinuities are found to be:(UNFORMATTED TABLE OR EQUATION FOLLOWS)$$\\vbox{\\halign{#\\hfil&&\\qquad #\\hfil\\cr &$\\rm\\Delta E\\sb{v}$\\ (eV)\\cr\\cr GaN on AlN &0.60 $\\pm$ 0.24\\cr AlN on GaN &0.57 $\\pm$ 0.22\\cr InN on GaN &0.93 $\\pm$ 0.25\\cr GaN on InN &0.59 $\\pm$ 0.24\\cr InN on AlN &1.71 $\\pm$ 0.20\\cr AlN on InN &1.32 $\\pm$ 0.14\\cr}}$$(TABLE/EQUATION ENDS)","abstract_html":"In this thesis the band alignments for wurtzite (0001) heterojunctions of AlN, GaN, and InN semiconductors are measured by x-ray photoemission spectroscopy. The bands alignments are all found to be Type I, and the valence-band discontinuities are found to be:(UNFORMATTED TABLE OR EQUATION FOLLOWS)$$\\vbox{\\halign{#\\hfil&amp;&amp;\\qquad #\\hfil\\cr &amp;$\\rm\\Delta E\\sb{v}<span class=\"etd-inline-math\"> (eV)\\cr\\cr GaN on AlN &amp;0.60 </span>\\pm$ 0.24\\cr AlN on GaN &amp;0.57 $\\pm$ 0.22\\cr InN on GaN &amp;0.93 $\\pm$ 0.25\\cr GaN on InN &amp;0.59 $\\pm$ 0.24\\cr InN on AlN &amp;1.71 $\\pm$ 0.20\\cr AlN on InN &amp;1.32 $\\pm$ 0.14\\cr}}$$(TABLE/EQUATION ENDS)","abstract_has_math":true,"creators":["Martin, Gregory Allen"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Physics","degree_department":null,"school":null,"contributors":["Wolfe, J.P."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-05-07T13:06:19Z","date_published":"2011-05-07T13:06:19Z","updated_at":"2026-07-22T22:25:17Z","subjects":["Engineering, Electronics and Electrical","Physics, Condensed Matter","Engineering, Materials Science"],"languages":["eng"],"rights":["Copyright 1996 Martin, Gregory Allen"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["9780591199352","AAI9712370","(UMI)AAI9712370"],"render_values":[{"text":"9780591199352","href":null,"code":true},{"text":"AAI9712370","href":null,"code":true},{"text":"(UMI)AAI9712370","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/21357","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Wolfe, J.P."]},{"key":"dc:creator","label":"Author","values":["Martin, Gregory Allen"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-05-07T13:06:19Z","10000-01-01","1996"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Physics"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical","Physics, Condensed Matter","Engineering, Materials Science"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 1996 Martin, Gregory Allen"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["9780591199352","AAI9712370","(UMI)AAI9712370","http://hdl.handle.net/2142/21357"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["In this thesis the band alignments for wurtzite (0001) heterojunctions of AlN, GaN, and InN semiconductors are measured by x-ray photoemission spectroscopy. The bands alignments are all found to be Type I, and the valence-band discontinuities are found to be:(UNFORMATTED TABLE OR EQUATION FOLLOWS)$$\\vbox{\\halign{#\\hfil&&\\qquad #\\hfil\\cr &$\\rm\\Delta E\\sb{v}$\\ (eV)\\cr\\cr GaN on AlN &0.60 $\\pm$ 0.24\\cr AlN on GaN &0.57 $\\pm$ 0.22\\cr InN on GaN &0.93 $\\pm$ 0.25\\cr GaN on InN &0.59 $\\pm$ 0.24\\cr InN on AlN &1.71 $\\pm$ 0.20\\cr AlN on InN &1.32 $\\pm$ 0.14\\cr}}$$(TABLE/EQUATION ENDS)","\"Forward-backward growth asymmetries are found for InN$\\vert$GaN and InN$\\vert$AlN, and highlight the importance of lattice mismatch and its influence on band alignment. The dielectric midgap energy is affected by lattice mismatch strain to a small degree, but in the opposite direction as observed in the experimental results. The strain-induced piezoelectric effect would provide effects of the correct sign, but an explicit overlayer thickness dependence is not observed: The model of pseudomorphic strain is rejected for InN$\\vert$GaN and InN$\\vert$AlN as expected for the exceedingly large lattice mismatches, but pseudomorphic strain is not ruled out for GaN$\\vert$AlN. Thermal mismatch strain is rejected as a significant factor. In general there is insufficient knowledge of strain conditions at heterojunctions of AlN, GaN, and InN to provide quantitative strain corrections to the observed valence-band discontinuities. A bonding model assumes the lattice mismatch is accommodated by dislocations and dangling bonds at the interface. The dangling bonds are viewed as dipole corrections to the ideal lattice-mismatched heterojunction, and the dipole model accounts for the signs and trends of the observed forward-backward asymmetries but the model values are an order of magnitude too small. Using rough approximations for strain and dangling bond corrections the \"\"bulk\"\" valence-band discontinuities are estimated as GaN$\\vert$AlN $\\approx$ 0.7 eV, InN$\\vert$GaN $\\approx$ 0.76 eV, and InN$\\vert$AlN $\\approx$ 1.51 eV. These values satisfy transitivity to well within experimental and estimation uncertainties. Tabulations of x-ray photoemission values for core-level energies with respect to valence band edges for wurtzite AlN, GaN, and InN are presented.\"","Made available in DSpace on 2011-05-07T13:06:19Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9712370.pdf: 3017177 bytes, checksum: 9c10564653b304e7b6542f762c06ed9c (MD5) Previous issue date: 1996","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:50:13Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:22:55-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"]},{"key":"dc:title","label":"Title","values":["Semiconductor electronic band alignment at heterojunctions of wurtzite aluminum nitride, gallium nitride, and indium nitride"]}]}],"canonical_facts":{"dc:contributor":["Wolfe, J.P."],"dc:creator":["Martin, Gregory Allen"],"dc:date":["2011-05-07T13:06:19Z","10000-01-01","1996"],"dc:description":["In this thesis the band alignments for wurtzite (0001) heterojunctions of AlN, GaN, and InN semiconductors are measured by x-ray photoemission spectroscopy. The bands alignments are all found to be Type I, and the valence-band discontinuities are found to be:(UNFORMATTED TABLE OR EQUATION FOLLOWS)$$\\vbox{\\halign{#\\hfil&&\\qquad #\\hfil\\cr &$\\rm\\Delta E\\sb{v}$\\ (eV)\\cr\\cr GaN on AlN &0.60 $\\pm$ 0.24\\cr AlN on GaN &0.57 $\\pm$ 0.22\\cr InN on GaN &0.93 $\\pm$ 0.25\\cr GaN on InN &0.59 $\\pm$ 0.24\\cr InN on AlN &1.71 $\\pm$ 0.20\\cr AlN on InN &1.32 $\\pm$ 0.14\\cr}}$$(TABLE/EQUATION ENDS)","\"Forward-backward growth asymmetries are found for InN$\\vert$GaN and InN$\\vert$AlN, and highlight the importance of lattice mismatch and its influence on band alignment. The dielectric midgap energy is affected by lattice mismatch strain to a small degree, but in the opposite direction as observed in the experimental results. The strain-induced piezoelectric effect would provide effects of the correct sign, but an explicit overlayer thickness dependence is not observed: The model of pseudomorphic strain is rejected for InN$\\vert$GaN and InN$\\vert$AlN as expected for the exceedingly large lattice mismatches, but pseudomorphic strain is not ruled out for GaN$\\vert$AlN. Thermal mismatch strain is rejected as a significant factor. In general there is insufficient knowledge of strain conditions at heterojunctions of AlN, GaN, and InN to provide quantitative strain corrections to the observed valence-band discontinuities. A bonding model assumes the lattice mismatch is accommodated by dislocations and dangling bonds at the interface. The dangling bonds are viewed as dipole corrections to the ideal lattice-mismatched heterojunction, and the dipole model accounts for the signs and trends of the observed forward-backward asymmetries but the model values are an order of magnitude too small. Using rough approximations for strain and dangling bond corrections the \"\"bulk\"\" valence-band discontinuities are estimated as GaN$\\vert$AlN $\\approx$ 0.7 eV, InN$\\vert$GaN $\\approx$ 0.76 eV, and InN$\\vert$AlN $\\approx$ 1.51 eV. These values satisfy transitivity to well within experimental and estimation uncertainties. Tabulations of x-ray photoemission values for core-level energies with respect to valence band edges for wurtzite AlN, GaN, and InN are presented.\"","Made available in DSpace on 2011-05-07T13:06:19Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9712370.pdf: 3017177 bytes, checksum: 9c10564653b304e7b6542f762c06ed9c (MD5) Previous issue date: 1996","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:50:13Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:22:55-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"],"dc:identifier":["9780591199352","AAI9712370","(UMI)AAI9712370","http://hdl.handle.net/2142/21357"],"dc:language":["eng"],"dc:rights":["Copyright 1996 Martin, Gregory Allen"],"dc:subject":["Engineering, Electronics and Electrical","Physics, Condensed Matter","Engineering, Materials Science"],"dc:title":["Semiconductor electronic band alignment at heterojunctions of wurtzite aluminum nitride, gallium nitride, and indium nitride"],"dc:type":["text"],"thesis:degree_discipline":["Physics"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:17Z"}