In situ spectroscopic ellipsometry studies of silicon film crystallinity and interface structure deposited by DC reactive magnetron sputtering

This work reports a systematic series of in situ spectroscopic ellipsometry (SE) studies on silicon film growth by reactive magnetron sputtering of a Si target in (Ar + H$\sb2$) at low temperatures ($\le$600$\sp\circ$C). The complete crystalline film growth zones have been identified for the first time.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Materials Science and Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Yang, Yonghong

Contributors dc:contributor

• Abelson, John R.

• Engineering, Electronics and Electrical
• Physics, Condensed Matter
• Engineering, Materials Science

Statement dc:rights

• Copyright 1996 Yang, Yonghong

Language dc:language

eng

Identifier

AAI9625218
(UMI)AAI9625218

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/21315