Preparation and characterization of in situ deposited metal-insulator-III-V semiconductor devices

In this thesis, the growth, fabrication, and characterization of in-situ deposited III-V semiconductor-based Metal-Insulator-Semiconductor (MIS) devices are described. The two III-V semiconductors investigated were $\rm In\sb{0.53}Ga\sb{0.47}As$ and GaAs. The problems related to air exposure of the semiconductor surface in ex-situ process was circumvented in this work by depositing the insulator in-situ. A special growth system which integrates several MBE growth chambers with an ultrahigh vacuum chemical vapor deposition chamber was designed and built. All of the chambers in this growth system are connected by vacuum transfer tubes and sample transfer takes place under ultrahigh vacuum conditions. The technique of electron cyclotron resonance plasma-assisted deposition was used for the deposition of $\rm Si\sb3N\sb4$ and Si.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Mui, David Sai Lai

Contributors dc:contributor

• Morkoc, Hadis

• Engineering, Electronics and Electrical

Statement dc:rights

• Copyright 1992 Mui, David Sai Lai

Language dc:language

eng

Identifier

AAI9305627
(UMI)AAI9305627

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/21162