Growth and electronic properties of gallium arsenide and germanium metal insulator semiconductor structures

The metal insulator semiconductor (MIS) structure is arguably the most technologically important type of solid in existence. The microelectronics revolution of the last thirty years is made possible largely due to the ability to realize extremely high quality metal/SiO$\sb2$/Si metal oxide semiconductor (MOS) structures. Unfortunately, silicon does not stand out in its ability to pass charge carriers with the highest speed. Significant improvements in the performance of many areas of electronics would result if another, high mobility semiconductor could be implemented into a high quality MIS structure.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Physics

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Reed, John Charles

Contributors dc:contributor

• Morkoc, Hadis

• Engineering, Electronics and Electrical
• Physics, Electricity and Magnetism
• Physics, Condensed Matter

Statement dc:rights

• Copyright 1994 Reed, John Charles

Language dc:language

eng

Identifier

AAI9512524
(UMI)AAI9512524

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/21134