Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
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Showing 1 to 20 of 24 for “"Metal oxide semiconductor (MOS)"”.
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Microplasma Transistor With Quasi Metal-Oxide-Semiconductor (mos)/metal-Insulator-Metal (Mim) Electron Emitters
Modeling of these devices entailed solving the differential form of Poisson's equation, subject to particle flux continuity of the cathode. Comparison of the model predictions with experimental estimates of the sheath potential shows agreement between the two to within 5% over the entire range in …
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Switch-Level Timing Simulation of Mos Vlsi Circuits
… very-large-scale integrated (VLSI) circuits of metal-oxide-semiconductor (MOS) transistors. Such tools are called switch-level timing simulators and they provide adequate information on the performance of the circuits with a reasonable expenditure of computation time even for very large …
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Growth and electronic properties of gallium arsenide and germanium metal insulator semiconductor structures
The metal insulator semiconductor (MIS) structure is arguably the most technologically important type of solid in existence. The microelectronics revolution of the last thirty years is made possible largely due to the ability to realize extremely high quality metal/SiO$\sb2$/Si metal oxide …
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Quantitative capacitance measurements using a scanning probe microscope
… to quantitatively measure the capacitance of metal-oxide-semiconductor (MOS) structures. The capability to deduce sample capacitances is based on resonant frequency shifting, which relies on the SCM's ultra-precise capacitance sensor. The technique, however, is distinct from scanning …
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Simulation of faults causing analog behavior in digital circuits
… for electrically oriented faults in digital metal-oxide semiconductor (MOS) very large scale integrated (VLSI) circuits. In particular, we are interested in the simulation of permanent electrical faults that are difficult to model using a logic-level or switch-level simulator, and the …
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Fast timing simulation of MOS VLSI circuits
… a cost effective timing simulator for digital metal-oxide semiconductor (MOS) very large scale integrated (VLSI) circuits. Verification of the correct operation of VLSI circuits is a very costly process. Therefore, the development of faster verification tools is very important. Fast timing …
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High-speed silicon electro-optic modulator for electronic photonic integrated circuits
… critically depends on the availability of CMOS-compatible high-speed modulators that enable the interaction of electronic and optical signals. This thesis investigates electrically driven Mach-Zehnder modulators based on high-index contrast silicon waveguide technology and electronic carrier …
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Ferrite characterization techniques & particle simulations for semiconductor devices
… The second topic, particle simulations for semiconductor devices, is discussed in the last paper. In the first paper, the method for extracting permeability from ferrite materials is discussed for the Keysight 16454A permeability extraction fixture, where the ferrite material to be …
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Nonvolatile memory devices with colloidal, 1.0 nm silicon nanoparticles : principles of operation, fabrication, measurements, and analysis
… density, low-voltage nonvolatile memory devices. Most previous works have studied nanoparticles of larger than 5 nm size and exhibited bulk-like trapping characteristics. Technologically viable and competitive future devices, however, will require nanoparticles of sub 3-nm dimensions; a …
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Development of high-performance GaN-based power transistors
… protection or a post-annealing treatment. A metal-oxide-semiconductor (MOS)-HEMT with sputtered-gate-SiO2 is demonstrated for the first time, which exhibits a record high breakdown voltage density. Furthermore, the sputtered-SiO2, together with the atomic-layer-deposited-Al2O3, forms a …
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Computational approaches to silicon based nanostructures
… suitable for the analysis and optimization of semiconductor device structures where quantum effects are important, as for example quantum wires and quantum dots but also ultra-narrow Metal-Oxide-Semiconductor (MOS) conduction channels at room temperature. Here, we describe these structures by …
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Broadband electrooptic modulators based on gallium arsenide materials
… which could be based on materials in the III-V semiconductor groups for the construction of an optical arbitrary waveform generation system. An OAWG system in the visible and near-infrared will motivate many novel applications yet to be envisioned, and will allow the transfer of technologies …
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Split gate tunnel barriers in double top gated silicon metal-oxide-semiconductor nanostructures
… in a double top-gated, enhancement-mode silicon metal-oxide-semiconductor (MOS) device structure are analyzed. Tunnel barriers implanted with a small number of antimony donor atoms and non-implanted tunnel barriers were both characterized electrically at liquid helium temperatures (T \u2248 4 K). …
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First principles modelling of tunnel field-effect transistors based on heterojunctions of strained Germanium/InGaAs alloys
… limitations of the down-scaling of the silicon metal–oxide–semiconductor (MOS) field-effect transistor (FET) and the demand for energy-efficient appliances motivate the study of alternative devices. The device under consideration is the biaxial tensile-strained Germanium on InGaAs alloy tunnel …
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Using Synthetic Nanopores for Single -Molecule Analyses: Detecting SNPs, Trapping DNA Molecules, and the Prospects for Sequencing DNA
… (3) miniaturizing membranes formed from metal-oxide-semiconductor (MOS) capacitors; and finally, and (4) compensating for the capacitance through external circuitry.
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Investigations of electron scattering mechanisms at the silicon-silicon dioxide interface
… mechanisms of electrons at the silicon-silicon dioxide interface. Theoretical surface conductivity mobility in a semiconductor space-charge region for the temperature range 1000K to 4000K was calculated using a classical Boltzmann-Fuchs equation with constant field and constant relaxation time …
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An Exploration of Entropy Sources in Standard CMOS for Cryptographic Applications
… entropy source in a commercially available semiconductor process. The techniques proposed have been designed to be process-agnostic, meaning that the work presented is highly transferable. The analysis of literature provides the motivation for selecting a quantum mechanism as a noise …
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Dual parametric sensors for highly sensitive nucleic acid detection
… based on field effect capacitive sensors with Metal-Oxide-Semiconductor (MOS) structure has been developed and its ability to provide real-time monitoring of oligonucleotide immobilization and hybridization events are studied. The immobilization of probe oligomers on the sensor surface and …
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Electrical characterization of high-k gate dielectrics for advanced CMOS gate stacks
The oxide/substrate interface quality and the dielectric quality of metal oxide semiconductor (MOS) gate stack structures are critical to future CMOS technology. As SiO_2 was replaced by the high-k dielectric to further equivalent oxide thickness (EOT), high mobility substrates like Ge have …
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DEVICE DEVELOPMENT AND CHARACTERIZATION FOR SOLID-STATE QUANTUM COMPUTATION
… quantum computing devices are among the most promising candidates for realizing quantum computers, due to the characteristics that they are more versatile and more easily scalable compared to other implementations, and the anticipated integration with existing silicon device fabrication …
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