Channeling studies of the location of zinc in gallium-arsenide

The diffusion of zinc in GaAs is highly anomalous in that the diffusion coefficient (D) is proportional to the zinc concentration squared in marked contrast to Fick's law which predicts that D is concentration independent. D is also very sensitive to the ambient conditions during diffusion, particularly the arsenic overpressure and the presence of other doping species. Further, heavy zinc doping can increase the self diffusion rates for gallium and aluminum by 10$\sp5$ and is thus useful for selectively disordering GaAs/GaAlAs layer structures. The diffusion mechanisms involved are poorly understood, particularly the experimental finding that the column V sites (As, P and Sb) are not disordered.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Physics

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Christenson, Kurt Karl

Contributors dc:contributor

• Brown, Frederick C.

• Engineering, Electronics and Electrical
• Physics, Condensed Matter
• Engineering, Materials Science

Statement dc:rights

• Copyright 1989 Christenson, Kurt Karl

Language dc:language

eng

Identifier

(UMI)AAI8916229
AAI8916229

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/21099