{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/21099"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/21099","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Channeling studies of the location of zinc in gallium-arsenide","abstract":"The diffusion of zinc in GaAs is highly anomalous in that the diffusion coefficient (D) is proportional to the zinc concentration squared in marked contrast to Fick's law which predicts that D is concentration independent. D is also very sensitive to the ambient conditions during diffusion, particularly the arsenic overpressure and the presence of other doping species. Further, heavy zinc doping can increase the self diffusion rates for gallium and aluminum by 10$\\sp5$ and is thus useful for selectively disordering GaAs/GaAlAs layer structures. The diffusion mechanisms involved are poorly understood, particularly the experimental finding that the column V sites (As, P and Sb) are not disordered.","abstract_html":"The diffusion of zinc in GaAs is highly anomalous in that the diffusion coefficient (D) is proportional to the zinc concentration squared in marked contrast to Fick's law which predicts that D is concentration independent. D is also very sensitive to the ambient conditions during diffusion, particularly the arsenic overpressure and the presence of other doping species. Further, heavy zinc doping can increase the self diffusion rates for gallium and aluminum by 10$\\sp5$ and is thus useful for selectively disordering GaAs/GaAlAs layer structures. The diffusion mechanisms involved are poorly understood, particularly the experimental finding that the column V sites (As, P and Sb) are not disordered.","abstract_has_math":true,"creators":["Christenson, Kurt Karl"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Physics","degree_department":null,"school":null,"contributors":["Brown, Frederick C."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-05-07T12:58:21Z","date_published":"2011-05-07T12:58:21Z","updated_at":"2026-07-22T22:25:17Z","subjects":["Engineering, Electronics and Electrical","Physics, Condensed Matter","Engineering, Materials Science"],"languages":["eng"],"rights":["Copyright 1989 Christenson, Kurt Karl"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["(UMI)AAI8916229","AAI8916229"],"render_values":[{"text":"(UMI)AAI8916229","href":null,"code":true},{"text":"AAI8916229","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/21099","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Brown, Frederick C."]},{"key":"dc:creator","label":"Author","values":["Christenson, Kurt Karl"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-05-07T12:58:21Z","10000-01-01","1989"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Physics"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical","Physics, Condensed Matter","Engineering, Materials Science"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 1989 Christenson, Kurt Karl"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["(UMI)AAI8916229","http://hdl.handle.net/2142/21099","AAI8916229"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["The diffusion of zinc in GaAs is highly anomalous in that the diffusion coefficient (D) is proportional to the zinc concentration squared in marked contrast to Fick's law which predicts that D is concentration independent. D is also very sensitive to the ambient conditions during diffusion, particularly the arsenic overpressure and the presence of other doping species. Further, heavy zinc doping can increase the self diffusion rates for gallium and aluminum by 10$\\sp5$ and is thus useful for selectively disordering GaAs/GaAlAs layer structures. The diffusion mechanisms involved are poorly understood, particularly the experimental finding that the column V sites (As, P and Sb) are not disordered.","We believe that the anomalous nature can be explained by combining the theories of R. L. Longini (1962) on the effect of the hole density on the interstitial population and of K. Weiser (1962) on the effect of the charge state of an interstitial on the diffusion activation energy. To test our hypothesis, we have located the position of the zinc in the GaAs lattice with the ALCHEMI technique (Atom Location by CHanneling Enhanced MIcroanalysis) in a Transmission Electron Microscope (TEM). This required substantial enhancements to the x-ray microanalytic abilities of the TEM along with an improved understand of the nature of the illumination in the immersion lens of a TEM, all of which are discussed.","Our results indicate that, within the experimental error, all of the zinc occupies the gallium sites which is consistent with our hypothesis. Further research involving TEM, synchrotron, diffusion and device studies are also suggested.","Made available in DSpace on 2011-05-07T12:58:21Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 8916229.pdf: 4928739 bytes, checksum: d691cba33a97a55aa0388e8b31e7a2ef (MD5) Previous issue date: 1989","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:48:28Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:21:57-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"]},{"key":"dc:title","label":"Title","values":["Channeling studies of the location of zinc in gallium-arsenide"]}]}],"canonical_facts":{"dc:contributor":["Brown, Frederick C."],"dc:creator":["Christenson, Kurt Karl"],"dc:date":["2011-05-07T12:58:21Z","10000-01-01","1989"],"dc:description":["The diffusion of zinc in GaAs is highly anomalous in that the diffusion coefficient (D) is proportional to the zinc concentration squared in marked contrast to Fick's law which predicts that D is concentration independent. D is also very sensitive to the ambient conditions during diffusion, particularly the arsenic overpressure and the presence of other doping species. Further, heavy zinc doping can increase the self diffusion rates for gallium and aluminum by 10$\\sp5$ and is thus useful for selectively disordering GaAs/GaAlAs layer structures. The diffusion mechanisms involved are poorly understood, particularly the experimental finding that the column V sites (As, P and Sb) are not disordered.","We believe that the anomalous nature can be explained by combining the theories of R. L. Longini (1962) on the effect of the hole density on the interstitial population and of K. Weiser (1962) on the effect of the charge state of an interstitial on the diffusion activation energy. To test our hypothesis, we have located the position of the zinc in the GaAs lattice with the ALCHEMI technique (Atom Location by CHanneling Enhanced MIcroanalysis) in a Transmission Electron Microscope (TEM). This required substantial enhancements to the x-ray microanalytic abilities of the TEM along with an improved understand of the nature of the illumination in the immersion lens of a TEM, all of which are discussed.","Our results indicate that, within the experimental error, all of the zinc occupies the gallium sites which is consistent with our hypothesis. Further research involving TEM, synchrotron, diffusion and device studies are also suggested.","Made available in DSpace on 2011-05-07T12:58:21Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 8916229.pdf: 4928739 bytes, checksum: d691cba33a97a55aa0388e8b31e7a2ef (MD5) Previous issue date: 1989","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:48:28Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:21:57-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"],"dc:identifier":["(UMI)AAI8916229","http://hdl.handle.net/2142/21099","AAI8916229"],"dc:language":["eng"],"dc:rights":["Copyright 1989 Christenson, Kurt Karl"],"dc:subject":["Engineering, Electronics and Electrical","Physics, Condensed Matter","Engineering, Materials Science"],"dc:title":["Channeling studies of the location of zinc in gallium-arsenide"],"dc:type":["text"],"thesis:degree_discipline":["Physics"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:17Z"}