Electron beam interactive oxide films for nanometer scale lithography

A number of oxide thin films produced by rf sputtering have been found to show high resolution lithographic characteristics when exposed under high dose rate conditions in a scanning transmission electron microscope. Holes and lines less than 10 nm in dimensions have been formed in amorphous films of Al$\sb2$O$\sb3$, Y$\sb2$O$\sb3$, Sc$\sb2$O$\sb3$, $\rm 3Al\sb2 {O\sb3}{\cdot}{2SiO\sb2}$ and $\rm {MgO}{\cdot}{Al\sb2}{O\sb3}$ through the direct removal of material during exposure. Complete exposure in these films was produced in less than 80 ms using a dose rate of $1 \times 10\sp5$ A/cm$\sp2$. In addition to the requirement of amorphous film structure the material characteristics found to be important in determining film response included high ionic character, high heat of formation and incorporation of inert gas into the structure. The high resolution characteristics in amorphous Al$\sb2$O$\sb3$ films allowed the production of 5.0 nm holes with a minimum center-to-center spacing of 8.9 nm.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Materials Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Hollenbeck, James Lowell

Contributors dc:contributor

• Buchanan, Relva C.

• Engineering, Electronics and Electrical
• Physics, Condensed Matter
• Engineering, Materials Science

Statement dc:rights

• Copyright 1989 Hollenbeck, James Lowell

Language dc:language

eng

Identifier

AAI9010889
(UMI)AAI9010889

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/20924