Photoemission and scanning tunneling microscopy investigation of elemental-semiconductor surfaces

The clean and reacted surfaces of Si(111)-(7x7), Si(100)-(2x1), Ge(111)-c(2x8), and Ge(100)-(2x1) have been studied to better understand the nature of these elemental-semiconductor surfaces. By carefully monitoring the adsorbate-induced changes in the electronic properties at the surface via spectroscopic methods such as photoemission, and by studying the resulting surface structures by scanning tunneling microscopy (STM), a quantitative description of the interaction and reaction between adsorbate and surface can be obtained. The photoemission method allows a distinction between atoms in different layers and in inequivalent sites by their binding energy shifts. By comparison with structural models and reference samples the number of atoms in each distinct chemical configuration can be determined. An adsorbate-induced chemical shift can be correlated with electronegativity differences between substrate and adsorbate atoms. In particular, studies of noble-metal interfaces with the (100) faces of Si and Ge demonstrate this novel combined application of photoemission and STM.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Physics

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Samsavar, Amin

Contributors dc:contributor

• Chiang, Tai-Chang

• Physics, Condensed Matter

Statement dc:rights

• Copyright 1990 Samsavar, Amin

Language dc:language

eng

Identifier

AAI9021750
(UMI)AAI9021750

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/20913