The design, analysis and characterization of high-performance heterostructure bipolar transistors

Described in this thesis is an investigation of design issues concerning the heterostructure bipolar transistor. The use of semiconductors with differing energy gaps in the bipolar transistor offers advantages over homojunction bipolar transistors in the ability to construct these bandgap differences such that carrier flow can be either impeded or assisted. At the emitter-base heterointerface, a wide bandgap emitter presents a barrier to injection from the base, thereby permitting higher doping of the base and lower doping of the emitter for improved high-speed performance. In the base, the formation of an accelerating field through doping or compositional grading can also improve high-speed performance, as well as reduce emitter-size effects. This thesis examines the advantages of these characteristics of the heterostructure bipolar transistor, both experimentally and theoretically.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Chen, James Jen-Chuan

Contributors dc:contributor

• Morkoc, Hadis

• Engineering, Electronics and Electrical

Statement dc:rights

• Copyright 1991 Chen, James Jen-Chuan

Language dc:language

eng

Identifier

AAI9210762
(UMI)AAI9210762

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/20645