Photoluminescence studies of hydrogenation and other defect-related processes in III-V compound semiconductors

Photoluminescence (PL) studies of defect-related processes in high-purity GaAs and related III-V compounds, are reported. A new effect of light-induced reactivation (LIR) or acceptors in p-type hydrogenated GaAs has been observed. This process is virtually athermal for weakly passivated acceptors such as Mg. Reactivation is persistent at cryogenic temperatures, but the material relaxes back to the passivated state at about room temperature. The LIR dependence on photon energy, illumination intensity, sample temperature and chemical identity of the passivated acceptor species indicates that LIR is electronically stimulated via recombination-enhanced vibrational excitation of acceptor-hydrogen complexes. A kinetic model that agrees with experimental data is proposed.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Materials Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Szafranek, Igor

Contributors dc:contributor

• Stillman, Gregory E.

• Engineering, Electronics and Electrical
• Physics, Condensed Matter
• Engineering, Materials Science

Statement dc:rights

• Copyright 1990 Szafranek, Igor

Language dc:language

eng

Identifier

AAI9114432
(UMI)AAI9114432

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/20462