Photoluminescence studies of hydrogenation and other defect-related processes in III-V compound semiconductors
Photoluminescence (PL) studies of defect-related processes in high-purity GaAs and related III-V compounds, are reported. A new effect of light-induced reactivation (LIR) or acceptors in p-type hydrogenated GaAs has been observed. This process is virtually athermal for weakly passivated acceptors such as Mg. Reactivation is persistent at cryogenic temperatures, but the material relaxes back to the passivated state at about room temperature. The LIR dependence on photon energy, illumination intensity, sample temperature and chemical identity of the passivated acceptor species indicates that LIR is electronically stimulated via recombination-enhanced vibrational excitation of acceptor-hydrogen complexes. A kinetic model that agrees with experimental data is proposed.
Engineering, Electronics and Electrical, Physics, Condensed Matter, Engineering, Materials Science
University of Illinois - Urbana-Champaign
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University of Illinois at Urbana-Champaign