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University of Illinois at Urbana-Champaign
Native oxides on aluminum-bearing III-V semiconductors with applications to single-mode behavior, bistability and switching
Abstract
dc:descriptionIn this work, water vapor oxidation of Al-bearing III--V semiconductors is employed to form high quality native oxides. The native oxides described are formed at temperatures in the range of 400$\sp\circ$C to 450$\sp\circ$C. Some of the basic properties of the oxide are first described. The properties include the insulating and diffusion masking nature of the oxide as well as its low index of refraction.
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Electrical Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2011
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- El-Zein, Nada Abdullatif
- Contributors dc:contributor
-
- Holonyak, Nick, Jr.
Subjects
dc:subject × 1Rights
dc:rights- Statement dc:rights
-
- Copyright 1995 El-Zein, Nada Abdullatif
- Language dc:language
- eng
Identifiers
dc:identifier.*- Identifier
-
AAI9543579
(UMI)AAI9543579 - OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/20418