Native oxides on aluminum-bearing III-V semiconductors with applications to single-mode behavior, bistability and switching
In this work, water vapor oxidation of Al-bearing III--V semiconductors is employed to form high quality native oxides. The native oxides described are formed at temperatures in the range of 400$\sp\circ$C to 450$\sp\circ$C. Some of the basic properties of the oxide are first described. The properties include the insulating and diffusion masking nature of the oxide as well as its low index of refraction.
University of Illinois - Urbana-Champaign
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University of Illinois at Urbana-Champaign