Material processing of quantum well infrared photodetectors

The material and device characterization of furnace and rapid thermally annealed (RTA) GaAs/AlGaAs multiple quantum well (MQW) infrared (IR) photodetectors (QWIPs) epitaxially grown on GaAs and Si substrates is presented. The advances in epitaxial growth allow the precise control of the dimensions, doping, and matrix concentration of the MQW. Therefore, the design of a QWIP with particular electrical and optical characteristics may be undertaken. To utilize a post-growth anneal to improve the QWIP's performance, the trade-offs must be considered to determine its usefulness. Depending on the application, the anneal may be deemed unnecessary due to its detrimental effect on a particular aspect of the operation.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical and Computer Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Malin, Jay Ira

Contributors dc:contributor

• Hsieh, Kuang-Chien

• Engineering, Electronics and Electrical
• Physics, Condensed Matter
• Physics, Optics

Statement dc:rights

• Copyright 1995 Malin, Jay Ira

Language dc:language

eng

Identifier

AAI9543666
(UMI)AAI9543666

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/20235