{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/20235"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/20235","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Material processing of quantum well infrared photodetectors","abstract":"The material and device characterization of furnace and rapid thermally annealed (RTA) GaAs/AlGaAs multiple quantum well (MQW) infrared (IR) photodetectors (QWIPs) epitaxially grown on GaAs and Si substrates is presented. The advances in epitaxial growth allow the precise control of the dimensions, doping, and matrix concentration of the MQW. Therefore, the design of a QWIP with particular electrical and optical characteristics may be undertaken. To utilize a post-growth anneal to improve the QWIP's performance, the trade-offs must be considered to determine its usefulness. Depending on the application, the anneal may be deemed unnecessary due to its detrimental effect on a particular aspect of the operation.","abstract_html":"The material and device characterization of furnace and rapid thermally annealed (RTA) GaAs/AlGaAs multiple quantum well (MQW) infrared (IR) photodetectors (QWIPs) epitaxially grown on GaAs and Si substrates is presented. The advances in epitaxial growth allow the precise control of the dimensions, doping, and matrix concentration of the MQW. Therefore, the design of a QWIP with particular electrical and optical characteristics may be undertaken. To utilize a post-growth anneal to improve the QWIP's performance, the trade-offs must be considered to determine its usefulness. Depending on the application, the anneal may be deemed unnecessary due to its detrimental effect on a particular aspect of the operation.","abstract_has_math":false,"creators":["Malin, Jay Ira"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical and Computer Engineering","degree_department":null,"school":null,"contributors":["Hsieh, Kuang-Chien"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-05-07T12:33:10Z","date_published":"2011-05-07T12:33:10Z","updated_at":"2026-07-22T22:25:15Z","subjects":["Engineering, Electronics and Electrical","Physics, Condensed Matter","Physics, Optics"],"languages":["eng"],"rights":["Copyright 1995 Malin, Jay Ira"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9543666","(UMI)AAI9543666"],"render_values":[{"text":"AAI9543666","href":null,"code":true},{"text":"(UMI)AAI9543666","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/20235","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Hsieh, Kuang-Chien"]},{"key":"dc:creator","label":"Author","values":["Malin, Jay Ira"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-05-07T12:33:10Z","10000-01-01","1995"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical and Computer Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical","Physics, Condensed Matter","Physics, Optics"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 1995 Malin, Jay Ira"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9543666","(UMI)AAI9543666","http://hdl.handle.net/2142/20235"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["The material and device characterization of furnace and rapid thermally annealed (RTA) GaAs/AlGaAs multiple quantum well (MQW) infrared (IR) photodetectors (QWIPs) epitaxially grown on GaAs and Si substrates is presented. The advances in epitaxial growth allow the precise control of the dimensions, doping, and matrix concentration of the MQW. Therefore, the design of a QWIP with particular electrical and optical characteristics may be undertaken. To utilize a post-growth anneal to improve the QWIP's performance, the trade-offs must be considered to determine its usefulness. Depending on the application, the anneal may be deemed unnecessary due to its detrimental effect on a particular aspect of the operation.","The availability of high quality GaAs and Si substrates, complemented by the maturity of GaAs device processing techniques, makes the QWIP an ideal candidate for 8-14 $\\mu$m long wavelength infrared (LWIR) detection. An extensive exploration of the interdiffusion process leads to the development of a suitable technique for shifting the optical response without harming the electrical characteristics. This, however, is a difficult task in light of the out-diffusion of the dopant from the wells into the barriers, which results in a high dark current.","Reading-out the QWIP focal plane array (FPA) (on GaAs substrate) is accomplished by indium bump-bonding the FPA to a Si multiplexer. Thermal cycling the hybrid, unfortunately, results in destroyed bonds due to the difference in thermal expansion coefficient of the two substrates. Growing the QWIP on a Si substrate better satisfies the packaging requirements; however, the dark current is higher. The technique of annealing for the purpose of defect annihilation results in improvements in the absolute response and a reduction in the dark current.","Made available in DSpace on 2011-05-07T12:33:10Z (GMT). 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The advances in epitaxial growth allow the precise control of the dimensions, doping, and matrix concentration of the MQW. Therefore, the design of a QWIP with particular electrical and optical characteristics may be undertaken. To utilize a post-growth anneal to improve the QWIP's performance, the trade-offs must be considered to determine its usefulness. Depending on the application, the anneal may be deemed unnecessary due to its detrimental effect on a particular aspect of the operation.","The availability of high quality GaAs and Si substrates, complemented by the maturity of GaAs device processing techniques, makes the QWIP an ideal candidate for 8-14 $\\mu$m long wavelength infrared (LWIR) detection. An extensive exploration of the interdiffusion process leads to the development of a suitable technique for shifting the optical response without harming the electrical characteristics. This, however, is a difficult task in light of the out-diffusion of the dopant from the wells into the barriers, which results in a high dark current.","Reading-out the QWIP focal plane array (FPA) (on GaAs substrate) is accomplished by indium bump-bonding the FPA to a Si multiplexer. Thermal cycling the hybrid, unfortunately, results in destroyed bonds due to the difference in thermal expansion coefficient of the two substrates. Growing the QWIP on a Si substrate better satisfies the packaging requirements; however, the dark current is higher. The technique of annealing for the purpose of defect annihilation results in improvements in the absolute response and a reduction in the dark current.","Made available in DSpace on 2011-05-07T12:33:10Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9543666.pdf: 2831343 bytes, checksum: 4512e9a23c902a24a259805dfa1d4e98 (MD5) Previous issue date: 1995","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:42:32Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:18:30-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"],"dc:identifier":["AAI9543666","(UMI)AAI9543666","http://hdl.handle.net/2142/20235"],"dc:language":["eng"],"dc:rights":["Copyright 1995 Malin, Jay Ira"],"dc:subject":["Engineering, Electronics and Electrical","Physics, Condensed Matter","Physics, Optics"],"dc:title":["Material processing of quantum well infrared photodetectors"],"dc:type":["text"],"thesis:degree_discipline":["Electrical and Computer Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:15Z"}