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University of Illinois at Urbana-Champaign
An investigation of heterojunction bipolar transistors by molecular beam epitaxy
Abstract
dc:descriptionDescribed in this thesis are the growth, characterization, and modeling of heterojunction bipolar transistors (HBTs). The superior high current handling capacity and high operation frequency of heterojunction bipolar transistors have attracted a great deal of interest in millimeter-wave and high-speed digital applications. This thesis details the performance of InAlAs/InGaAs and AlGaAs/GaAs-on-Si HBTs investigated with state-of-the-art results. Carrier transport across the heterointerface, the current conduction mechanism in the base, and related device parameters of the experimental results are emphasized.
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Electrical Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2011
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Won, Taeyoung
- Contributors dc:contributor
-
- Morkoc, Hadis
Subjects
dc:subject × 3Rights
dc:rights- Statement dc:rights
-
- Copyright 1989 Won, Taeyoung
- Language dc:language
- eng
Identifiers
dc:identifier.*- Identifier
-
AAI9011078
(UMI)AAI9011078 - OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/20215