{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/20215"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/20215","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"An investigation of heterojunction bipolar transistors by molecular beam epitaxy","abstract":"Described in this thesis are the growth, characterization, and modeling of heterojunction bipolar transistors (HBTs). The superior high current handling capacity and high operation frequency of heterojunction bipolar transistors have attracted a great deal of interest in millimeter-wave and high-speed digital applications. This thesis details the performance of InAlAs/InGaAs and AlGaAs/GaAs-on-Si HBTs investigated with state-of-the-art results. Carrier transport across the heterointerface, the current conduction mechanism in the base, and related device parameters of the experimental results are emphasized.","abstract_html":"Described in this thesis are the growth, characterization, and modeling of heterojunction bipolar transistors (HBTs). The superior high current handling capacity and high operation frequency of heterojunction bipolar transistors have attracted a great deal of interest in millimeter-wave and high-speed digital applications. This thesis details the performance of InAlAs/InGaAs and AlGaAs/GaAs-on-Si HBTs investigated with state-of-the-art results. Carrier transport across the heterointerface, the current conduction mechanism in the base, and related device parameters of the experimental results are emphasized.","abstract_has_math":false,"creators":["Won, Taeyoung"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":["Morkoc, Hadis"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-05-07T12:32:31Z","date_published":"2011-05-07T12:32:31Z","updated_at":"2026-07-22T22:25:15Z","subjects":["Engineering, Electronics and Electrical","Physics, Condensed Matter","Engineering, Materials Science"],"languages":["eng"],"rights":["Copyright 1989 Won, Taeyoung"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9011078","(UMI)AAI9011078"],"render_values":[{"text":"AAI9011078","href":null,"code":true},{"text":"(UMI)AAI9011078","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/20215","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Morkoc, Hadis"]},{"key":"dc:creator","label":"Author","values":["Won, Taeyoung"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-05-07T12:32:31Z","10000-01-01","1989"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical","Physics, Condensed Matter","Engineering, Materials Science"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 1989 Won, Taeyoung"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9011078","(UMI)AAI9011078","http://hdl.handle.net/2142/20215"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Described in this thesis are the growth, characterization, and modeling of heterojunction bipolar transistors (HBTs). The superior high current handling capacity and high operation frequency of heterojunction bipolar transistors have attracted a great deal of interest in millimeter-wave and high-speed digital applications. This thesis details the performance of InAlAs/InGaAs and AlGaAs/GaAs-on-Si HBTs investigated with state-of-the-art results. Carrier transport across the heterointerface, the current conduction mechanism in the base, and related device parameters of the experimental results are emphasized.","A theoretical model that relates output characteristics of heterojunction bipolar transistors to the device structure and material properties is developed and presented with an introduction of the junction velocity concept across the heterointerface. A fairly close agreement between experimental results and theoretical calculation of output characteristics is demonstrated. The InAlAs/InGaAs and AlGaAs/GaAs-on-Si heterojunction bipolar transistors exhibited excellent device performance with the best dc current gains, in MBE grown devices, for both n-p-n and p-n-p structures to date. These results indicate the potential of heterojunction bipolar transistors in realizing high-speed, high-power microwave and millimeter-wave integrated circuits and fast digital switching circuits.","Made available in DSpace on 2011-05-07T12:32:31Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9011078.pdf: 4526004 bytes, checksum: 2316088f964f414c6429205ad846a887 (MD5) Previous issue date: 1989","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:42:24Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:18:25-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"]},{"key":"dc:title","label":"Title","values":["An investigation of heterojunction bipolar transistors by molecular beam epitaxy"]}]}],"canonical_facts":{"dc:contributor":["Morkoc, Hadis"],"dc:creator":["Won, Taeyoung"],"dc:date":["2011-05-07T12:32:31Z","10000-01-01","1989"],"dc:description":["Described in this thesis are the growth, characterization, and modeling of heterojunction bipolar transistors (HBTs). The superior high current handling capacity and high operation frequency of heterojunction bipolar transistors have attracted a great deal of interest in millimeter-wave and high-speed digital applications. This thesis details the performance of InAlAs/InGaAs and AlGaAs/GaAs-on-Si HBTs investigated with state-of-the-art results. Carrier transport across the heterointerface, the current conduction mechanism in the base, and related device parameters of the experimental results are emphasized.","A theoretical model that relates output characteristics of heterojunction bipolar transistors to the device structure and material properties is developed and presented with an introduction of the junction velocity concept across the heterointerface. A fairly close agreement between experimental results and theoretical calculation of output characteristics is demonstrated. The InAlAs/InGaAs and AlGaAs/GaAs-on-Si heterojunction bipolar transistors exhibited excellent device performance with the best dc current gains, in MBE grown devices, for both n-p-n and p-n-p structures to date. These results indicate the potential of heterojunction bipolar transistors in realizing high-speed, high-power microwave and millimeter-wave integrated circuits and fast digital switching circuits.","Made available in DSpace on 2011-05-07T12:32:31Z (GMT). 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