Mechanisms and kinetics of silicon atomic-layer epitaxy on silicon(001)2x1 and germanium(001)2x1

Single-crystal Si films have been grown on Si(001)2x1 substrates by UV-photostimulated atomic-layer epitaxy (ALE) from Si$\sb2$H$\sb6.$ The ALE deposition rate R per growth cycle remains constant at 0.43 monolayers (ML), 1 ML = $6.8\times10\sp{14}$ cm$\sp{-2}$, over a wide range of deposition parameters: growth temperature (T$\sb{\rm S}$ = 180-400$\sp\circ$C), Si$\sb2$H$\sb6$ exposure, UV laser energy density, and number of UV laser pulses per cycle. A film growth model, based upon the results of adsorption/desorption measurements, film growth experiments, and Monte Carlo simulations, is used to describe the reaction pathway for the process.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Materials Science and Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Tsu, Robert Yung-Hsi

Contributors dc:contributor

• Greene, Joseph E.

• Physics, Condensed Matter
• Engineering, Metallurgy
• Engineering, Materials Science

Statement dc:rights

• Copyright 1993 Tsu, Robert Yung-Hsi

Language dc:language

eng

Identifier

AAI9411805
(UMI)AAI9411805

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/20087