{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/20087"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/20087","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Mechanisms and kinetics of silicon atomic-layer epitaxy on silicon(001)2x1 and germanium(001)2x1","abstract":"Single-crystal Si films have been grown on Si(001)2x1 substrates by UV-photostimulated atomic-layer epitaxy (ALE) from Si$\\sb2$H$\\sb6.$ The ALE deposition rate R per growth cycle remains constant at 0.43 monolayers (ML), 1 ML = $6.8\\times10\\sp{14}$ cm$\\sp{-2}$, over a wide range of deposition parameters: growth temperature (T$\\sb{\\rm S}$ = 180-400$\\sp\\circ$C), Si$\\sb2$H$\\sb6$ exposure, UV laser energy density, and number of UV laser pulses per cycle. A film growth model, based upon the results of adsorption/desorption measurements, film growth experiments, and Monte Carlo simulations, is used to describe the reaction pathway for the process.","abstract_html":"Single-crystal Si films have been grown on Si(001)2x1 substrates by UV-photostimulated atomic-layer epitaxy (ALE) from Si$\\sb2$H$\\sb6.$ The ALE deposition rate R per growth cycle remains constant at 0.43 monolayers (ML), 1 ML = $6.8\\times10\\sp{14}$ cm$\\sp{-2}$, over a wide range of deposition parameters: growth temperature (T$\\sb{\\rm S}$ = 180-400$\\sp\\circ$C), Si$\\sb2$H$\\sb6$ exposure, UV laser energy density, and number of UV laser pulses per cycle. A film growth model, based upon the results of adsorption/desorption measurements, film growth experiments, and Monte Carlo simulations, is used to describe the reaction pathway for the process.","abstract_has_math":true,"creators":["Tsu, Robert Yung-Hsi"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Materials Science and Engineering","degree_department":null,"school":null,"contributors":["Greene, Joseph E."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-05-07T12:28:23Z","date_published":"2011-05-07T12:28:23Z","updated_at":"2026-07-22T22:25:15Z","subjects":["Physics, Condensed Matter","Engineering, Metallurgy","Engineering, Materials Science"],"languages":["eng"],"rights":["Copyright 1993 Tsu, Robert Yung-Hsi"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9411805","(UMI)AAI9411805"],"render_values":[{"text":"AAI9411805","href":null,"code":true},{"text":"(UMI)AAI9411805","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/20087","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Greene, Joseph E."]},{"key":"dc:creator","label":"Author","values":["Tsu, Robert Yung-Hsi"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-05-07T12:28:23Z","10000-01-01","1993"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Materials Science and Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Physics, Condensed Matter","Engineering, Metallurgy","Engineering, Materials Science"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 1993 Tsu, Robert Yung-Hsi"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI9411805","(UMI)AAI9411805","http://hdl.handle.net/2142/20087"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Single-crystal Si films have been grown on Si(001)2x1 substrates by UV-photostimulated atomic-layer epitaxy (ALE) from Si$\\sb2$H$\\sb6.$ The ALE deposition rate R per growth cycle remains constant at 0.43 monolayers (ML), 1 ML = $6.8\\times10\\sp{14}$ cm$\\sp{-2}$, over a wide range of deposition parameters: growth temperature (T$\\sb{\\rm S}$ = 180-400$\\sp\\circ$C), Si$\\sb2$H$\\sb6$ exposure, UV laser energy density, and number of UV laser pulses per cycle. A film growth model, based upon the results of adsorption/desorption measurements, film growth experiments, and Monte Carlo simulations, is used to describe the reaction pathway for the process.","Si$\\sb2$H$\\sb6$ is dissociatively adsorbed on Si surface dimers as two SiH$\\sb3$ radicals which, as shown by electron energy loss spectroscopy (EELS) and reflection high-energy electron diffraction (RHEED), subsequently dissociate to SiH$\\sb2$ and H. The saturated H-terminated surface is stable and passive to further Si$\\sb2$H$\\sb6$ exposure. ArF or KrF laser pulses $(\\simeq$20 ns) are used to desorb H, following a Si$\\sb2$H$\\sb6$ exposure, and the growth is repeated until the desired film thickness is obtained. Transmission electron microscopy (TEM) and cross-sectional TEM together with selective area and convergent-beam electron diffraction patterns show that the ALE films are epitaxial layers with no observed extended defects or strain.","The Si$\\sb2$H$\\sb6$ sticking probability at 25$\\sp\\circ$C is found to be $\\simeq$0.5 while the saturation coverage is $\\simeq$0.5 ML on Ge(001)2x1. Scanning tunneling microscopy (STM) observations show the adsorbed overlayers exhibit regions of local ordering, in contrast to the case for Si$\\sb2$H$\\sb6$ on Si(001), and are composed of SiH$\\sb2$ and GeH with evidence of residual SiH$\\sb3.$ Hydrogen desorption is observed at temperatures as low as 150$\\sp\\circ$C, admolecules are mobile at 270$\\sp\\circ$C, and complete ordering is observed by 330$\\sp\\circ$C. Film growth on Ge(001) is observed to proceed via a mixed mode.","Made available in DSpace on 2011-05-07T12:28:23Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9411805.pdf: 5586168 bytes, checksum: 8c56654dc11706df09b61523289220d0 (MD5) Previous issue date: 1993","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:41:28Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:17:57-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"]},{"key":"dc:title","label":"Title","values":["Mechanisms and kinetics of silicon atomic-layer epitaxy on silicon(001)2x1 and germanium(001)2x1"]}]}],"canonical_facts":{"dc:contributor":["Greene, Joseph E."],"dc:creator":["Tsu, Robert Yung-Hsi"],"dc:date":["2011-05-07T12:28:23Z","10000-01-01","1993"],"dc:description":["Single-crystal Si films have been grown on Si(001)2x1 substrates by UV-photostimulated atomic-layer epitaxy (ALE) from Si$\\sb2$H$\\sb6.$ The ALE deposition rate R per growth cycle remains constant at 0.43 monolayers (ML), 1 ML = $6.8\\times10\\sp{14}$ cm$\\sp{-2}$, over a wide range of deposition parameters: growth temperature (T$\\sb{\\rm S}$ = 180-400$\\sp\\circ$C), Si$\\sb2$H$\\sb6$ exposure, UV laser energy density, and number of UV laser pulses per cycle. A film growth model, based upon the results of adsorption/desorption measurements, film growth experiments, and Monte Carlo simulations, is used to describe the reaction pathway for the process.","Si$\\sb2$H$\\sb6$ is dissociatively adsorbed on Si surface dimers as two SiH$\\sb3$ radicals which, as shown by electron energy loss spectroscopy (EELS) and reflection high-energy electron diffraction (RHEED), subsequently dissociate to SiH$\\sb2$ and H. The saturated H-terminated surface is stable and passive to further Si$\\sb2$H$\\sb6$ exposure. ArF or KrF laser pulses $(\\simeq$20 ns) are used to desorb H, following a Si$\\sb2$H$\\sb6$ exposure, and the growth is repeated until the desired film thickness is obtained. Transmission electron microscopy (TEM) and cross-sectional TEM together with selective area and convergent-beam electron diffraction patterns show that the ALE films are epitaxial layers with no observed extended defects or strain.","The Si$\\sb2$H$\\sb6$ sticking probability at 25$\\sp\\circ$C is found to be $\\simeq$0.5 while the saturation coverage is $\\simeq$0.5 ML on Ge(001)2x1. Scanning tunneling microscopy (STM) observations show the adsorbed overlayers exhibit regions of local ordering, in contrast to the case for Si$\\sb2$H$\\sb6$ on Si(001), and are composed of SiH$\\sb2$ and GeH with evidence of residual SiH$\\sb3.$ Hydrogen desorption is observed at temperatures as low as 150$\\sp\\circ$C, admolecules are mobile at 270$\\sp\\circ$C, and complete ordering is observed by 330$\\sp\\circ$C. Film growth on Ge(001) is observed to proceed via a mixed mode.","Made available in DSpace on 2011-05-07T12:28:23Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9411805.pdf: 5586168 bytes, checksum: 8c56654dc11706df09b61523289220d0 (MD5) Previous issue date: 1993","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:41:28Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:17:57-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"],"dc:identifier":["AAI9411805","(UMI)AAI9411805","http://hdl.handle.net/2142/20087"],"dc:language":["eng"],"dc:rights":["Copyright 1993 Tsu, Robert Yung-Hsi"],"dc:subject":["Physics, Condensed Matter","Engineering, Metallurgy","Engineering, Materials Science"],"dc:title":["Mechanisms and kinetics of silicon atomic-layer epitaxy on silicon(001)2x1 and germanium(001)2x1"],"dc:type":["text"],"thesis:degree_discipline":["Materials Science and Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:15Z"}