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University of Illinois at Urbana-Champaign
Numerical modeling of electron cyclotron resonance plasma
Abstract
dc:descriptionThe semiconductor industry is introducing electron cyclotron resonance (ECR) plasma reactors as reliable wafer etching tools. This industry requires radially uniform etching rate and radially uniform etching anisotropy. The etching rate and etching anisotropy depend on the ECR plasma properties.
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Nuclear Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2011
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Anghel, Vinicius Nicolae Petre
- Contributors dc:contributor
-
- Axford, Roy A.
Subjects
dc:subject × 1Rights
dc:rights- Statement dc:rights
-
- Copyright 1996 Anghel, Vinicius Nicolae Petre
- Language dc:language
- eng
Identifiers
dc:identifier.*- Identifier
-
9780591087741
AAI9702448
(UMI)AAI9702448 - OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/20013