{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/20013"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/20013","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Numerical modeling of electron cyclotron resonance plasma","abstract":"The semiconductor industry is introducing electron cyclotron resonance (ECR) plasma reactors as reliable wafer etching tools. This industry requires radially uniform etching rate and radially uniform etching anisotropy. The etching rate and etching anisotropy depend on the ECR plasma properties.","abstract_html":"The semiconductor industry is introducing electron cyclotron resonance (ECR) plasma reactors as reliable wafer etching tools. This industry requires radially uniform etching rate and radially uniform etching anisotropy. The etching rate and etching anisotropy depend on the ECR plasma properties.","abstract_has_math":false,"creators":["Anghel, Vinicius Nicolae Petre"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Nuclear Engineering","degree_department":null,"school":null,"contributors":["Axford, Roy A."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-05-07T12:26:01Z","date_published":"2011-05-07T12:26:01Z","updated_at":"2026-07-22T22:25:15Z","subjects":["Physics, Fluid and Plasma"],"languages":["eng"],"rights":["Copyright 1996 Anghel, Vinicius Nicolae Petre"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["9780591087741","AAI9702448","(UMI)AAI9702448"],"render_values":[{"text":"9780591087741","href":null,"code":true},{"text":"AAI9702448","href":null,"code":true},{"text":"(UMI)AAI9702448","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/20013","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Axford, Roy A."]},{"key":"dc:creator","label":"Author","values":["Anghel, Vinicius Nicolae Petre"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-05-07T12:26:01Z","10000-01-01","1996"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Nuclear Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Physics, Fluid and Plasma"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 1996 Anghel, Vinicius Nicolae Petre"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["9780591087741","AAI9702448","(UMI)AAI9702448","http://hdl.handle.net/2142/20013"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["The semiconductor industry is introducing electron cyclotron resonance (ECR) plasma reactors as reliable wafer etching tools. This industry requires radially uniform etching rate and radially uniform etching anisotropy. The etching rate and etching anisotropy depend on the ECR plasma properties.","The magnetized plasma equations are solved along magnetic field lines in cylindrical geometry. Generalizing Guan et al. (1), the plasma equations on different field lines are coupled by ambipolar charged particle diffusion across magnetic field lines. Electrons and one ion species are considered to move in a neutral gas. The neutral gas density is given by a simple model. Electron impact ionization, ion-neutral and ion-ion elastic scattering, and ion-neutral charge exchange are taken into account.","\"The magnetic field lines are traced in cylindrical geometry by solving the differential equations for field lines in terms of a definite integral. On each field line, the continuity, momentum, parallel and perpendicular energy equations for ions are solved using a shooting method. The neighborhoods of the boundary points are treated by an original numerical method for first-order systems of singular differential equations. The charged particle perpendicular leakage is evaluated by an original \"\"finite-difference\"\" method, by considering field lines instead of points.\"","The results of the computation show that the profile of the microwave power absorption is the dominant factor controlling the ion current on the wafer electrode. Varying divergence of the magnetic field lines improves the radial uniformity of the ion current, at the expense of decreasing it.","Made available in DSpace on 2011-05-07T12:26:01Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9702448.pdf: 2563349 bytes, checksum: 5e67c77788547b9962711bbd83935ecd (MD5) Previous issue date: 1996","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:40:57Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:17:39-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"]},{"key":"dc:title","label":"Title","values":["Numerical modeling of electron cyclotron resonance plasma"]}]}],"canonical_facts":{"dc:contributor":["Axford, Roy A."],"dc:creator":["Anghel, Vinicius Nicolae Petre"],"dc:date":["2011-05-07T12:26:01Z","10000-01-01","1996"],"dc:description":["The semiconductor industry is introducing electron cyclotron resonance (ECR) plasma reactors as reliable wafer etching tools. This industry requires radially uniform etching rate and radially uniform etching anisotropy. The etching rate and etching anisotropy depend on the ECR plasma properties.","The magnetized plasma equations are solved along magnetic field lines in cylindrical geometry. Generalizing Guan et al. (1), the plasma equations on different field lines are coupled by ambipolar charged particle diffusion across magnetic field lines. Electrons and one ion species are considered to move in a neutral gas. The neutral gas density is given by a simple model. Electron impact ionization, ion-neutral and ion-ion elastic scattering, and ion-neutral charge exchange are taken into account.","\"The magnetic field lines are traced in cylindrical geometry by solving the differential equations for field lines in terms of a definite integral. On each field line, the continuity, momentum, parallel and perpendicular energy equations for ions are solved using a shooting method. The neighborhoods of the boundary points are treated by an original numerical method for first-order systems of singular differential equations. The charged particle perpendicular leakage is evaluated by an original \"\"finite-difference\"\" method, by considering field lines instead of points.\"","The results of the computation show that the profile of the microwave power absorption is the dominant factor controlling the ion current on the wafer electrode. Varying divergence of the magnetic field lines improves the radial uniformity of the ion current, at the expense of decreasing it.","Made available in DSpace on 2011-05-07T12:26:01Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 9702448.pdf: 2563349 bytes, checksum: 5e67c77788547b9962711bbd83935ecd (MD5) Previous issue date: 1996","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:40:57Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:17:39-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"],"dc:identifier":["9780591087741","AAI9702448","(UMI)AAI9702448","http://hdl.handle.net/2142/20013"],"dc:language":["eng"],"dc:rights":["Copyright 1996 Anghel, Vinicius Nicolae Petre"],"dc:subject":["Physics, Fluid and Plasma"],"dc:title":["Numerical modeling of electron cyclotron resonance plasma"],"dc:type":["text"],"thesis:degree_discipline":["Nuclear Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:15Z"}