Atom diffusion and impurity-induced layer disordering in quantum well III-V semiconductor heterostructures

The process of impurity-induced layer disordering (IILD), or layer intermixing, in Al$\sb{\rm x}$Ga$\sb{\rm 1-x}$As-GaAs quantum-well heterostructures (QWHs) and superlattices (SLs), and in related III-V quantum well heterostructures, has developed extensively. A large variety of experimental data on IILD are discussed and provide newer information and further perspective on crystal self-diffusion, impurity diffusion, and also the important defect mechanisms that control diffusion in Al$\sb{\rm x}$Ga$\sb{\rm 1-x}$As-GaAs, and in related III-V semiconductors. Based on the behavior of Column III vacancies and Column III interstitials, models for the crystal self-diffusion and impurity diffusion that describe IILD are presented and shown to be consistent with available experimental data. We mention that it may be possible to realize even more advanced device structures using IILD, for example, quantum well wires or quantum well boxes. These will require an even greater understanding of the mechanisms (crystal processes) that control IILD, as well as require more refined methods of pattern definition, masking procedures, and crystal processing.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Deppe, Dennis Glenn

Contributors dc:contributor

• Holonyak, Nick, Jr.

• Engineering, Electronics and Electrical

Statement dc:rights

• Copyright 1989 Deppe, Dennis Glenn

Language dc:language

eng

Identifier

AAI8916238
(UMI)AAI8916238

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/19738