{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/19738"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/19738","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Atom diffusion and impurity-induced layer disordering in quantum well III-V semiconductor heterostructures","abstract":"The process of impurity-induced layer disordering (IILD), or layer intermixing, in Al$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As-GaAs quantum-well heterostructures (QWHs) and superlattices (SLs), and in related III-V quantum well heterostructures, has developed extensively. A large variety of experimental data on IILD are discussed and provide newer information and further perspective on crystal self-diffusion, impurity diffusion, and also the important defect mechanisms that control diffusion in Al$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As-GaAs, and in related III-V semiconductors. Based on the behavior of Column III vacancies and Column III interstitials, models for the crystal self-diffusion and impurity diffusion that describe IILD are presented and shown to be consistent with available experimental data. We mention that it may be possible to realize even more advanced device structures using IILD, for example, quantum well wires or quantum well boxes. These will require an even greater understanding of the mechanisms (crystal processes) that control IILD, as well as require more refined methods of pattern definition, masking procedures, and crystal processing.","abstract_html":"The process of impurity-induced layer disordering (IILD), or layer intermixing, in Al$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As-GaAs quantum-well heterostructures (QWHs) and superlattices (SLs), and in related III-V quantum well heterostructures, has developed extensively. A large variety of experimental data on IILD are discussed and provide newer information and further perspective on crystal self-diffusion, impurity diffusion, and also the important defect mechanisms that control diffusion in Al$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As-GaAs, and in related III-V semiconductors. Based on the behavior of Column III vacancies and Column III interstitials, models for the crystal self-diffusion and impurity diffusion that describe IILD are presented and shown to be consistent with available experimental data. We mention that it may be possible to realize even more advanced device structures using IILD, for example, quantum well wires or quantum well boxes. These will require an even greater understanding of the mechanisms (crystal processes) that control IILD, as well as require more refined methods of pattern definition, masking procedures, and crystal processing.","abstract_has_math":true,"creators":["Deppe, Dennis Glenn"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical Engineering","degree_department":null,"school":null,"contributors":["Holonyak, Nick, Jr."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-05-07T12:16:58Z","date_published":"2011-05-07T12:16:58Z","updated_at":"2026-07-22T22:25:14Z","subjects":["Engineering, Electronics and Electrical"],"languages":["eng"],"rights":["Copyright 1989 Deppe, Dennis Glenn"],"rights_urls":[],"identifier_entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI8916238","(UMI)AAI8916238"],"render_values":[{"text":"AAI8916238","href":null,"code":true},{"text":"(UMI)AAI8916238","href":null,"code":true}]}]},"links":{"outbound_url":"http://hdl.handle.net/2142/19738","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Holonyak, Nick, Jr."]},{"key":"dc:creator","label":"Author","values":["Deppe, Dennis Glenn"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-05-07T12:16:58Z","10000-01-01","1989"]},{"key":"dc:type","label":"Dc Type","values":["text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Engineering, Electronics and Electrical"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["eng"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 1989 Deppe, Dennis Glenn"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["AAI8916238","(UMI)AAI8916238","http://hdl.handle.net/2142/19738"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["The process of impurity-induced layer disordering (IILD), or layer intermixing, in Al$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As-GaAs quantum-well heterostructures (QWHs) and superlattices (SLs), and in related III-V quantum well heterostructures, has developed extensively. A large variety of experimental data on IILD are discussed and provide newer information and further perspective on crystal self-diffusion, impurity diffusion, and also the important defect mechanisms that control diffusion in Al$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As-GaAs, and in related III-V semiconductors. Based on the behavior of Column III vacancies and Column III interstitials, models for the crystal self-diffusion and impurity diffusion that describe IILD are presented and shown to be consistent with available experimental data. We mention that it may be possible to realize even more advanced device structures using IILD, for example, quantum well wires or quantum well boxes. These will require an even greater understanding of the mechanisms (crystal processes) that control IILD, as well as require more refined methods of pattern definition, masking procedures, and crystal processing.","Made available in DSpace on 2011-05-07T12:16:58Z (GMT). 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A large variety of experimental data on IILD are discussed and provide newer information and further perspective on crystal self-diffusion, impurity diffusion, and also the important defect mechanisms that control diffusion in Al$\\sb{\\rm x}$Ga$\\sb{\\rm 1-x}$As-GaAs, and in related III-V semiconductors. Based on the behavior of Column III vacancies and Column III interstitials, models for the crystal self-diffusion and impurity diffusion that describe IILD are presented and shown to be consistent with available experimental data. We mention that it may be possible to realize even more advanced device structures using IILD, for example, quantum well wires or quantum well boxes. These will require an even greater understanding of the mechanisms (crystal processes) that control IILD, as well as require more refined methods of pattern definition, masking procedures, and crystal processing.","Made available in DSpace on 2011-05-07T12:16:58Z (GMT). No. of bitstreams: 2 license.txt: 4922 bytes, checksum: 910b249b4beec47e7ab768910c8f966f (MD5) 8916238.pdf: 2996803 bytes, checksum: 79bf486a97e21d7b42ddbf37c844f780 (MD5) Previous issue date: 1989","Item marked as restricted to the 'UIUC Users [automated]' Group (id=2) by Howard Ding (hding2@illinois.edu) on 2011-05-07T14:39:06Z Item is restricted indefinitely.","Restriction data tranferred 2014-07-01T11:16:24-05:00 Original Data Group with Access UIUC Users [automated] Release Date: none Reason: ETDs are only available to UIUC Users without author permission","ETDs are only available to UIUC Users without author permission","U of I Only"],"dc:identifier":["AAI8916238","(UMI)AAI8916238","http://hdl.handle.net/2142/19738"],"dc:language":["eng"],"dc:rights":["Copyright 1989 Deppe, Dennis Glenn"],"dc:subject":["Engineering, Electronics and Electrical"],"dc:title":["Atom diffusion and impurity-induced layer disordering in quantum well III-V semiconductor heterostructures"],"dc:type":["text"],"thesis:degree_discipline":["Electrical Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:14Z"}