Studies of trap generation in silicon-dioxide and electromigration in aluminum thin films

The effects of HCl on trap generation in SiO$\sb2$ film and at Si/SiO$\sb2$ interface at high electric fields are studied by avalanche electron injection. A comparison between a 9%-HCl-oxide MOS capacitor and a dry-oxide MOS capacitor shows that HCl decreases the hydrogenation rate of the boron acceptor in the silicon surface layer and increases the density of the peaked interface trap at 0.3 eV above the silicon midgap. A new chlorine-related, positively-charged electron trap in the oxide is observed and isolated from the chlorine-independent, negatively-charged oxide hole trap. Chlorine also reduces the density of the smaller cross-section oxide electron trap, which gives the turn-around phenomenon.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Chen, Ann J.

Contributors dc:contributor

• Sah, C.T.

• Engineering, Electronics and Electrical

Statement dc:rights

• Copyright 1989 Chen, Ann J.

Language dc:language

eng

Identifier

AAI8916225
(UMI)AAI8916225

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/19715