Global ETD Search
Search theses and dissertations gathered from participating repositories worldwide. Every result links back to the library that holds it. No account is needed.
Results
Showing 1 to 20 of 66 for “"electromigration"”.
-
Computer simulation of electromigration in microelectronics interconnect
Electromigration (EM) is a phenomenon that occurs in metal conductor carrying high density electric current. EM causes voids and hillocks that may lead to open or short circuits in electronic devices. Avoiding these failures therefore is a major challenge in semiconductor device and packaging …
-
Electromigration and chemical diffusion in titanium carbide
… to measure the diffusion concentration profiles. Electromigration studies of carbon in titanium carbide yielded a positive effective charge which increases from +0.4 at l8250 C to possibly as high as +2.8 at 2480oC. The observed sign and temperature dependence of/the effective charge are …
-
Hierarchical electromigration reliability diagnosis for ULSI interconnects
Electromigration is the phenomenon of metal ion mass transport along the grain boundaries when a metallic interconnect is stressed under high current density. In recent years, the line width of ULSI interconnects has been shrunk into the submicron regime. This gives rise to serious concerns about …
-
Atomistic model of void nucleation and growth during electromigration
Void formation due to electromigration is among the most significant reliability problems in the semiconductor industry. To help gain a better understanding of the atomistic processes involved in void formation under electromigration conditions we have used the Embedded Atom Method (BAM) to …
-
Analysis of a Partial Differential Equation Model of Surface Electromigration
… Equation (PDE) based model combining surface electromigration and wetting is developed for the analysis of the morphological instability of mono-crystalline metal films in a high temperature environment typical to operational conditions of microelectronic interconnects. The atomic mobility and …
-
Modeling of and experiments characterizing electromigration-induced failures in interconnects
… growth processes enables a determination of the electromigration-induced failure times of these interconnects. This thesis provides this knowledge through the development of an electromigration simulation MIT/EmSim and through experiments. The stress effect on diffusivity and alloying effects …
-
Scaling and process effect on electromigration reliability for Cu/low k interconnects
… (Cu) and oxide dielectric by low-k dielectric. Electromigration (EM) turned out to be a serious reliability problem for Cu interconnects due to the implementation of mechanically weaker low-k dielectrics. In addition, line width and via size scaling resulted in the need of a novel diffusion …
-
Studying the effect of Cu microstructure on electromigration reliability using statistical simulation
Electromigration (EM) describes the mass transport in a metal driven by the momentum transfer from electron scattering with metal ions. This can develop into a degradation process due to void growth for on-chip interconnects when subjected to high electric current densities and eventual …
-
Electromigration behavior and reliability of bamboo Al(Cu) interconnects for integrated circuits
Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1999.
-
Simulation of the effect of microstructure on electromigration induced failure of interconnects
Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Civil and Environmental Engineering, 1997.
-
Studies of trap generation in silicon-dioxide and electromigration in aluminum thin films
The effects of HCl on trap generation in SiO$\sb2$ film and at Si/SiO$\sb2$ interface at high electric fields are studied by avalanche electron injection. A comparison between a 9%-HCl-oxide MOS capacitor and a dry-oxide MOS capacitor shows that HCl decreases the hydrogenation rate of the boron …
-
The electromigration drift velocity and the reliability of dual-damascene copper interconnect trees
… performance Si-based integrated circuits. Its electromigration behavior must be quantified and an experimental basis for a circuit-level reliability assessment is needed. Experiments on straight two-terminal via-to-via Cu dual-damascene segments with different line lengths, both with via-above …
-
An analysis of exciton transport, electron tunneling, and electromigration in nanotube and nanowire systems
Herein three systems - electromigration in metal nanowires, electron tunneling in single-molecules, and carbon nanotube photovoltaics - are investigated. In the first area, electromigrative failure of metal nanowires has been shown to form single-molecule tunnel junctions, but the process has …
-
Electromigration failure and reliability of single-crystal and polycyrstalline aluminum interconnects for integrated circuits
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1995.
-
Effect of microstructure of aluminum alloys on the electromigration-limited reliability of VLSI interconnects
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1990.
-
Electromigration-Induced Interconnect Aging and its Repercussions on the Performance of Nanometer-Scale VLSI Circuits
… achieving good interconnect performance is electromigration (EM), a physical wear-out mechanism that occurs in metal wires carrying electrical current. EM is projected to limit the performance in future generations of ICs, especially for the wires carrying unidirectional (DC) currents, and …
-
Microstructural modification of thin films and its relation to the electromigration-limited reliability of VLSI interconnects
Thesis (Sc. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1992.
-
A Coupled PDE Model for the Morphological Instability of a Multi-Component Thin Film During Surface Electromigration
<p>In this thesis a model involving two coupled nonlinear PDEs is developed to study instability of a two-component metal film due to horizontal electric field and in a high-temperature environment similar to operational conditions of integrated circuits. The proposed model assumes the anisotropies …
Page 1 of 4