Process Development for High Speed Transistor Laser Operation

The transistor laser (TL) o ers advantages over conventional diode laser structure. The TL uses high base doping and minority carrier collection to reduce the recombination lifetime in the active region of the device to <30 ps. A fast recombination lifetime <30 ps reduces the photon-carrier resonance when modulating the device at RF frequencies. However, the transistor laser with high intrinsic optical speed is limited by more than just internal recombination lifetime; it is also limited by parasitic resistances and capacitances. Small signal bandwidth of 20 GHz and digital modulation of 20 Gbit/s was obtained by reducing or eliminating extrinsic parasitics which limit device performance through the optimization of device geometry and process conditions.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical & Computer Engr

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• James, Adam L.

Contributors dc:contributor

• Feng, Milton
• Holonyak, Nick, Jr.
• Jin, Jianming
• Schutt-Ainé, José E.

• Transistor Laser

Statement dc:rights

• Copyright 2010 Adam James

Language dc:language

en

Handle dc:identifier

http://hdl.handle.net/2142/18567

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/18567