{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/18567"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/18567","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Process Development for High Speed Transistor Laser Operation","abstract":"The transistor laser (TL) o ers advantages over conventional diode laser structure. The TL uses high base doping and minority carrier collection to reduce the recombination lifetime in the active region of the device to <30 ps. A fast recombination lifetime <30 ps reduces the photon-carrier resonance when modulating the device at RF frequencies. However, the transistor laser with high intrinsic optical speed is limited by more than just internal recombination lifetime; it is also limited by parasitic resistances and capacitances. Small signal bandwidth of 20 GHz and digital modulation of 20 Gbit/s was obtained by reducing or eliminating extrinsic parasitics which limit device performance through the optimization of device geometry and process conditions.","abstract_html":"The transistor laser (TL) o ers advantages over conventional diode laser structure. The TL uses high base doping and minority carrier collection to reduce the recombination lifetime in the active region of the device to &lt;30 ps. A fast recombination lifetime &lt;30 ps reduces the photon-carrier resonance when modulating the device at RF frequencies. However, the transistor laser with high intrinsic optical speed is limited by more than just internal recombination lifetime; it is also limited by parasitic resistances and capacitances. Small signal bandwidth of 20 GHz and digital modulation of 20 Gbit/s was obtained by reducing or eliminating extrinsic parasitics which limit device performance through the optimization of device geometry and process conditions.","abstract_has_math":false,"creators":["James, Adam L."],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical & Computer Engr","degree_department":null,"school":null,"contributors":["Feng, Milton","Holonyak, Nick, Jr.","Jin, Jianming","Schutt-Ainé, José E."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-01-21T22:46:49Z","date_published":"2011-01-21T22:46:49Z","updated_at":"2026-07-22T22:25:11Z","subjects":["Transistor Laser"],"languages":["en"],"rights":["Copyright 2010 Adam James"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/18567","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Feng, Milton","Holonyak, Nick, Jr.","Jin, Jianming","Schutt-Ainé, José E."]},{"key":"dc:creator","label":"Author","values":["James, Adam L."]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-01-21T22:46:49Z","2013-01-22T11:00:26Z","2010-12"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Transistor Laser"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2010 Adam James"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/18567"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["The transistor laser (TL) o ers advantages over conventional diode laser structure. 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