Modification of an ultra-high-vacuum scanning tunneling microscope for silicon nanostructure fabrication

In this thesis, two major modifications to an ultra-high-vacuum scanning tunneling microscope system are described: an update to the cooling plate structure for more effective cooling of the dipstick and sample holder, and the installation of a capillary doser for concentrating the precursor gas to the tip-ample junction during silicon nanostructure growth. The updated cooling plate is able to shorten the total sample preparation time from 6 hours to 3 hours. The capillary doser lowers the base pressure during the silicon growth experiment by two orders of magnitude. The system operation after the system modification was tested. The system is now ready for subsequent silicon nanostructure growth using disilane gas.

Name thesis:degree_name

M.S.

Level thesis:degree_level

Thesis

Discipline thesis:degree_discipline

Electrical & Computer Engr

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2011

Author dc:creator

• Zhang, Fan

Contributors dc:contributor

• Lyding, Joseph W.

• scanning tunneling microscope (STM)
• silicon
• nanostrucuture

Statement dc:rights

• Copyright 2010 Fan Zhang

Language dc:language

en

Handle dc:identifier

http://hdl.handle.net/2142/18461

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/18461