{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/18461"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/18461","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Modification of an ultra-high-vacuum scanning tunneling microscope for silicon nanostructure fabrication","abstract":"In this thesis, two major modifications to an ultra-high-vacuum scanning tunneling microscope system are described: an update to the cooling plate structure for more effective cooling of the dipstick and sample holder, and the installation of a capillary doser for concentrating the precursor gas to the tip-ample junction during silicon nanostructure growth. The updated cooling plate is able to shorten the total sample preparation time from 6 hours to 3 hours. The capillary doser lowers the base pressure during the silicon growth experiment by two orders of magnitude. The system operation after the system modification was tested. The system is now ready for subsequent silicon nanostructure growth using disilane gas.","abstract_html":"In this thesis, two major modifications to an ultra-high-vacuum scanning tunneling microscope system are described: an update to the cooling plate structure for more effective cooling of the dipstick and sample holder, and the installation of a capillary doser for concentrating the precursor gas to the tip-ample junction during silicon nanostructure growth. The updated cooling plate is able to shorten the total sample preparation time from 6 hours to 3 hours. The capillary doser lowers the base pressure during the silicon growth experiment by two orders of magnitude. The system operation after the system modification was tested. The system is now ready for subsequent silicon nanostructure growth using disilane gas.","abstract_has_math":false,"creators":["Zhang, Fan"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"M.S.","degree_level":"Thesis","degree_discipline":"Electrical & Computer Engr","degree_department":null,"school":null,"contributors":["Lyding, Joseph W."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2011,"date_issued":"2011-01-14T22:51:36Z","date_published":"2011-01-14T22:51:36Z","updated_at":"2026-07-22T22:25:11Z","subjects":["scanning tunneling microscope (STM)","silicon","nanostrucuture"],"languages":["en"],"rights":["Copyright 2010 Fan Zhang"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/18461","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Lyding, Joseph W."]},{"key":"dc:creator","label":"Author","values":["Zhang, Fan"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2011-01-14T22:51:36Z","2010-12"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Thesis"]},{"key":"thesis:degree_name","label":"Degree Name","values":["M.S."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["scanning tunneling microscope (STM)","silicon","nanostrucuture"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2010 Fan Zhang"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/18461"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["In this thesis, two major modifications to an ultra-high-vacuum scanning tunneling microscope system are described: an update to the cooling plate structure for more effective cooling of the dipstick and sample holder, and the installation of a capillary doser for concentrating the precursor gas to the tip-ample junction during silicon nanostructure growth. The updated cooling plate is able to shorten the total sample preparation time from 6 hours to 3 hours. The capillary doser lowers the base pressure during the silicon growth experiment by two orders of magnitude. The system operation after the system modification was tested. The system is now ready for subsequent silicon nanostructure growth using disilane gas.","Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2010-11-29T19:34:59Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 1 Zhang_Fan.pdf: 7294638 bytes, checksum: 2dd2e5642d80bf263eacf70efe1418e1 (MD5)","Made available in DSpace on 2011-01-14T22:51:36Z (GMT). No. of bitstreams: 2 Zhang_Fan.pdf: 7294638 bytes, checksum: 2dd2e5642d80bf263eacf70efe1418e1 (MD5) license.txt: 4059 bytes, checksum: d878131923736175eb5cbd77cf2452bf (MD5)"]},{"key":"dc:title","label":"Title","values":["Modification of an ultra-high-vacuum scanning tunneling microscope for silicon nanostructure fabrication"]}]}],"canonical_facts":{"dc:contributor":["Lyding, Joseph W."],"dc:creator":["Zhang, Fan"],"dc:date":["2011-01-14T22:51:36Z","2010-12"],"dc:description":["In this thesis, two major modifications to an ultra-high-vacuum scanning tunneling microscope system are described: an update to the cooling plate structure for more effective cooling of the dipstick and sample holder, and the installation of a capillary doser for concentrating the precursor gas to the tip-ample junction during silicon nanostructure growth. The updated cooling plate is able to shorten the total sample preparation time from 6 hours to 3 hours. The capillary doser lowers the base pressure during the silicon growth experiment by two orders of magnitude. The system operation after the system modification was tested. The system is now ready for subsequent silicon nanostructure growth using disilane gas.","Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2010-11-29T19:34:59Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 1 Zhang_Fan.pdf: 7294638 bytes, checksum: 2dd2e5642d80bf263eacf70efe1418e1 (MD5)","Made available in DSpace on 2011-01-14T22:51:36Z (GMT). No. of bitstreams: 2 Zhang_Fan.pdf: 7294638 bytes, checksum: 2dd2e5642d80bf263eacf70efe1418e1 (MD5) license.txt: 4059 bytes, checksum: d878131923736175eb5cbd77cf2452bf (MD5)"],"dc:identifier":["http://hdl.handle.net/2142/18461"],"dc:language":["en"],"dc:rights":["Copyright 2010 Fan Zhang"],"dc:subject":["scanning tunneling microscope (STM)","silicon","nanostrucuture"],"dc:title":["Modification of an ultra-high-vacuum scanning tunneling microscope for silicon nanostructure fabrication"],"thesis:degree_discipline":["Electrical & Computer Engr"],"thesis:degree_level":["Thesis"],"thesis:degree_name":["M.S."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:11Z"}