Ultra-low power phase change memory with carbon nanotube interconnects

Phase change memory (PCM) is a promising candidate for the next-generation non-volatile data storage, though its high programming current has been a major concern. By utilizing carbon nanotubes (CNTs) as interconnects to induce phase change in ultra small regions of Ge2Sb2Te5 (GST), we are able to lower the programming current to less than 10 μA, almost two orders of magnitude less than state-of-the-art PCM devices. Normal memory operations of the nanotube-PCM device are demonstrated using pulse measurements with exceptionally low current and power consumption. Electrical characterizations show that the switching voltage in nanotube-PCM devices is highly scalable.

Name thesis:degree_name

M.S.

Level thesis:degree_level

Thesis

Discipline thesis:degree_discipline

Electrical & Computer Engr

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2010

Author dc:creator

• Xiong, Feng

Contributors dc:contributor

• Pop, Eric

• phase change memory
• GeSbTe (GST)
• chalcogenide
• carbon nanotubes
• finite element modeling
• COMSOL

Statement dc:rights

• Copyright 2010 Feng Xiong

Language dc:language

en

Handle dc:identifier

http://hdl.handle.net/2142/16782

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/16782