{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/16782"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/16782","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Ultra-low power phase change memory with carbon nanotube interconnects","abstract":"Phase change memory (PCM) is a promising candidate for the next-generation non-volatile data storage, though its high programming current has been a major concern. By utilizing carbon nanotubes (CNTs) as interconnects to induce phase change in ultra small regions of Ge2Sb2Te5 (GST), we are able to lower the programming current to less than 10 μA, almost two orders of magnitude less than state-of-the-art PCM devices. Normal memory operations of the nanotube-PCM device are demonstrated using pulse measurements with exceptionally low current and power consumption. Electrical characterizations show that the switching voltage in nanotube-PCM devices is highly scalable.","abstract_html":"Phase change memory (PCM) is a promising candidate for the next-generation non-volatile data storage, though its high programming current has been a major concern. By utilizing carbon nanotubes (CNTs) as interconnects to induce phase change in ultra small regions of Ge2Sb2Te5 (GST), we are able to lower the programming current to less than 10 μA, almost two orders of magnitude less than state-of-the-art PCM devices. Normal memory operations of the nanotube-PCM device are demonstrated using pulse measurements with exceptionally low current and power consumption. Electrical characterizations show that the switching voltage in nanotube-PCM devices is highly scalable.","abstract_has_math":false,"creators":["Xiong, Feng"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"M.S.","degree_level":"Thesis","degree_discipline":"Electrical & Computer Engr","degree_department":null,"school":null,"contributors":["Pop, Eric"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2010,"date_issued":"2010-08-20T17:57:43Z","date_published":"2010-08-20T17:57:43Z","updated_at":"2026-07-22T22:25:09Z","subjects":["phase change memory","GeSbTe (GST)","chalcogenide","carbon nanotubes","finite element modeling","COMSOL"],"languages":["en"],"rights":["Copyright 2010 Feng Xiong"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/16782","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Pop, Eric"]},{"key":"dc:creator","label":"Author","values":["Xiong, Feng"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2010-08-20T17:57:43Z","2010-08"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Thesis"]},{"key":"thesis:degree_name","label":"Degree Name","values":["M.S."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["phase change memory","GeSbTe (GST)","chalcogenide","carbon nanotubes","finite element modeling","COMSOL"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2010 Feng Xiong"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/16782"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Phase change memory (PCM) is a promising candidate for the next-generation non-volatile data storage, though its high programming current has been a major concern. By utilizing carbon nanotubes (CNTs) as interconnects to induce phase change in ultra small regions of Ge2Sb2Te5 (GST), we are able to lower the programming current to less than 10 μA, almost two orders of magnitude less than state-of-the-art PCM devices. Normal memory operations of the nanotube-PCM device are demonstrated using pulse measurements with exceptionally low current and power consumption. Electrical characterizations show that the switching voltage in nanotube-PCM devices is highly scalable.","Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2010-07-20T20:50:21Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 1 Xiong_Feng.pdf: 3322148 bytes, checksum: 9378bceb3b6a7d1941ba839d1fc88f9d (MD5)","Made available in DSpace on 2010-08-20T17:57:43Z (GMT). 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Normal memory operations of the nanotube-PCM device are demonstrated using pulse measurements with exceptionally low current and power consumption. Electrical characterizations show that the switching voltage in nanotube-PCM devices is highly scalable.","Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2010-07-20T20:50:21Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 1 Xiong_Feng.pdf: 3322148 bytes, checksum: 9378bceb3b6a7d1941ba839d1fc88f9d (MD5)","Made available in DSpace on 2010-08-20T17:57:43Z (GMT). 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