Simulation of implantation and diffusion processes for electro-thermal microcantilevers

Atomic Force Microscope (AFM) compatible electro-thermal microcantilevers, capable of independently controlling cantilever temperature and electrical potential/current flow through the end of the tip, are proposed and designed. An important characteristic of these probes is the spatial dopant distribution that gives these devices the required electrical and thermal functionality. In this work, we have identified the design goals for these probes and determine the corresponding implantation and diffusion parameters for the doping steps. We used a two-dimensional model to simulate the process steps for doping different regions of the electro-thermal probe using DIOS, a multidimensional process simulator in the TCAD suite. Each cantilever probe consists of three legs – two of the legs are heavily doped to carry electrical current, with a low doped resistive heater at the cantilever free end, and the third leg, which is either heavily doped or made of metal coated silicon, is used to bias the tip. Based on the arrangement used to separate the electrical path from the heating circuit, three basic designs were developed - the “diode-type”, “transistor-type” and “metal-coated-electrode-leg-type”. Simulation geometries representative of the two kinds of p-n junctions in the “transistor” or the back-to-back diode configuration are used for doping simulations. Antimony (Sb) and Boron (B) were used as the respective n- and p-type doping species. The implantation and diffusion parameters were optimized to obtain the desired dopant profiles.

Name thesis:degree_name

M.S.

Level thesis:degree_level

Thesis

Discipline thesis:degree_discipline

Mechanical Engineering

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2010

Author dc:creator

• Bhatia, Bikramjit

Contributors dc:contributor

• King, William P.

• Atomic Force Microscope (AFM)
• Electro-Thermal Microcantilevers
• Implantation and Diffusion

Statement dc:rights

• Copyright 2010 Bikramjit S. Bhatia

Language dc:language

en

Handle dc:identifier

http://hdl.handle.net/2142/16150

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/16150