{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/16150"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/16150","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Simulation of implantation and diffusion processes for electro-thermal microcantilevers","abstract":"Atomic Force Microscope (AFM) compatible electro-thermal microcantilevers, capable of independently controlling cantilever temperature and electrical potential/current flow through the end of the tip, are proposed and designed. An important characteristic of these probes is the spatial dopant distribution that gives these devices the required electrical and thermal functionality. In this work, we have identified the design goals for these probes and determine the corresponding implantation and diffusion parameters for the doping steps. We used a two-dimensional model to simulate the process steps for doping different regions of the electro-thermal probe using DIOS, a multidimensional process simulator in the TCAD suite. Each cantilever probe consists of three legs – two of the legs are heavily doped to carry electrical current, with a low doped resistive heater at the cantilever free end, and the third leg, which is either heavily doped or made of metal coated silicon, is used to bias the tip. Based on the arrangement used to separate the electrical path from the heating circuit, three basic designs were developed - the “diode-type”, “transistor-type” and “metal-coated-electrode-leg-type”. Simulation geometries representative of the two kinds of p-n junctions in the “transistor” or the back-to-back diode configuration are used for doping simulations. Antimony (Sb) and Boron (B) were used as the respective n- and p-type doping species. The implantation and diffusion parameters were optimized to obtain the desired dopant profiles.","abstract_html":"Atomic Force Microscope (AFM) compatible electro-thermal microcantilevers, capable of independently controlling cantilever temperature and electrical potential/current flow through the end of the tip, are proposed and designed. An important characteristic of these probes is the spatial dopant distribution that gives these devices the required electrical and thermal functionality. In this work, we have identified the design goals for these probes and determine the corresponding implantation and diffusion parameters for the doping steps. We used a two-dimensional model to simulate the process steps for doping different regions of the electro-thermal probe using DIOS, a multidimensional process simulator in the TCAD suite. Each cantilever probe consists of three legs – two of the legs are heavily doped to carry electrical current, with a low doped resistive heater at the cantilever free end, and the third leg, which is either heavily doped or made of metal coated silicon, is used to bias the tip. Based on the arrangement used to separate the electrical path from the heating circuit, three basic designs were developed - the “diode-type”, “transistor-type” and “metal-coated-electrode-leg-type”. Simulation geometries representative of the two kinds of p-n junctions in the “transistor” or the back-to-back diode configuration are used for doping simulations. Antimony (Sb) and Boron (B) were used as the respective n- and p-type doping species. The implantation and diffusion parameters were optimized to obtain the desired dopant profiles.","abstract_has_math":false,"creators":["Bhatia, Bikramjit"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"M.S.","degree_level":"Thesis","degree_discipline":"Mechanical Engineering","degree_department":null,"school":null,"contributors":["King, William P."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2010,"date_issued":"2010-05-19T18:39:00Z","date_published":"2010-05-19T18:39:00Z","updated_at":"2026-07-22T22:25:08Z","subjects":["Atomic Force Microscope (AFM)","Electro-Thermal Microcantilevers","Implantation and Diffusion"],"languages":["en"],"rights":["Copyright 2010 Bikramjit S. Bhatia"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/16150","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["King, William P."]},{"key":"dc:creator","label":"Author","values":["Bhatia, Bikramjit"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2010-05-19T18:39:00Z","2010-5"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Mechanical Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Thesis"]},{"key":"thesis:degree_name","label":"Degree Name","values":["M.S."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Atomic Force Microscope (AFM)","Electro-Thermal Microcantilevers","Implantation and Diffusion"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2010 Bikramjit S. Bhatia"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/16150"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Atomic Force Microscope (AFM) compatible electro-thermal microcantilevers, capable of independently controlling cantilever temperature and electrical potential/current flow through the end of the tip, are proposed and designed. An important characteristic of these probes is the spatial dopant distribution that gives these devices the required electrical and thermal functionality. In this work, we have identified the design goals for these probes and determine the corresponding implantation and diffusion parameters for the doping steps. We used a two-dimensional model to simulate the process steps for doping different regions of the electro-thermal probe using DIOS, a multidimensional process simulator in the TCAD suite. Each cantilever probe consists of three legs – two of the legs are heavily doped to carry electrical current, with a low doped resistive heater at the cantilever free end, and the third leg, which is either heavily doped or made of metal coated silicon, is used to bias the tip. Based on the arrangement used to separate the electrical path from the heating circuit, three basic designs were developed - the “diode-type”, “transistor-type” and “metal-coated-electrode-leg-type”. Simulation geometries representative of the two kinds of p-n junctions in the “transistor” or the back-to-back diode configuration are used for doping simulations. Antimony (Sb) and Boron (B) were used as the respective n- and p-type doping species. The implantation and diffusion parameters were optimized to obtain the desired dopant profiles.","Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2010-04-26T21:16:56Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 1 Bhatia_Bikramjit.pdf: 842954 bytes, checksum: acad22ec7d2a7a8351c17df084a18733 (MD5)","Made available in DSpace on 2010-05-19T18:39:00Z (GMT). No. of bitstreams: 2 Bhatia_Bikramjit.pdf: 842954 bytes, checksum: acad22ec7d2a7a8351c17df084a18733 (MD5) license.txt: 4065 bytes, checksum: f68f06d4ad4f6e8048164e694ca3117a (MD5)"]},{"key":"dc:title","label":"Title","values":["Simulation of implantation and diffusion processes for electro-thermal microcantilevers"]}]}],"canonical_facts":{"dc:contributor":["King, William P."],"dc:creator":["Bhatia, Bikramjit"],"dc:date":["2010-05-19T18:39:00Z","2010-5"],"dc:description":["Atomic Force Microscope (AFM) compatible electro-thermal microcantilevers, capable of independently controlling cantilever temperature and electrical potential/current flow through the end of the tip, are proposed and designed. An important characteristic of these probes is the spatial dopant distribution that gives these devices the required electrical and thermal functionality. In this work, we have identified the design goals for these probes and determine the corresponding implantation and diffusion parameters for the doping steps. We used a two-dimensional model to simulate the process steps for doping different regions of the electro-thermal probe using DIOS, a multidimensional process simulator in the TCAD suite. Each cantilever probe consists of three legs – two of the legs are heavily doped to carry electrical current, with a low doped resistive heater at the cantilever free end, and the third leg, which is either heavily doped or made of metal coated silicon, is used to bias the tip. Based on the arrangement used to separate the electrical path from the heating circuit, three basic designs were developed - the “diode-type”, “transistor-type” and “metal-coated-electrode-leg-type”. Simulation geometries representative of the two kinds of p-n junctions in the “transistor” or the back-to-back diode configuration are used for doping simulations. Antimony (Sb) and Boron (B) were used as the respective n- and p-type doping species. The implantation and diffusion parameters were optimized to obtain the desired dopant profiles.","Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2010-04-26T21:16:56Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 1 Bhatia_Bikramjit.pdf: 842954 bytes, checksum: acad22ec7d2a7a8351c17df084a18733 (MD5)","Made available in DSpace on 2010-05-19T18:39:00Z (GMT). No. of bitstreams: 2 Bhatia_Bikramjit.pdf: 842954 bytes, checksum: acad22ec7d2a7a8351c17df084a18733 (MD5) license.txt: 4065 bytes, checksum: f68f06d4ad4f6e8048164e694ca3117a (MD5)"],"dc:identifier":["http://hdl.handle.net/2142/16150"],"dc:language":["en"],"dc:rights":["Copyright 2010 Bikramjit S. Bhatia"],"dc:subject":["Atomic Force Microscope (AFM)","Electro-Thermal Microcantilevers","Implantation and Diffusion"],"dc:title":["Simulation of implantation and diffusion processes for electro-thermal microcantilevers"],"thesis:degree_discipline":["Mechanical Engineering"],"thesis:degree_level":["Thesis"],"thesis:degree_name":["M.S."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:08Z"}