Characteristics, Theory and Modeling of the Transistor Laser

The transistor laser possesses advantageous characteristics of fast base spontaneous carrier lifetime, high differential optical gain, and unique three-terminal electrical-optical characteristics for direct “read-out” of its optical properties. These potentially lead to advantageous and useful features for designing high-speed optical transmitters that operate without the limitations of resonance, a feature common in the operation of semiconductor (two-terminal) diode lasers. The characteristics of the transistor laser are studied by considering the charge transport, and the coupling of the photon and quantum-mechanical electron-hole recombination dynamics in the operation of the transistor laser. An analytical understanding of these physical characteristics is developed based on experimental data, and a computational model of the transistor laser is developed for device engineering and circuit design applications.

Name thesis:degree_name

Ph.D.

Level thesis:degree_level

Dissertation

Discipline thesis:degree_discipline

Electrical & Computer Engr

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2010

Author dc:creator

• Then, Han Wui

Contributors dc:contributor

• Feng, Milton
• Holonyak, Nick, Jr.
• Cheng, Keh-Yung
• Jin, Jianming
• Hsieh, Kuang-Chien

• transistor laser
• light-emitting transistor
• Heterojunction Bipolar Transistor (HBT)
• Diode Laser
• Quantum Well
• differential gain
• recombination
• current gain
• tunnel junction

Statement dc:rights

• Copyright 2009 Han Wui Then

Language dc:language

en

Handle dc:identifier

http://hdl.handle.net/2142/14740

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/14740