{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/14740"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/14740","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Characteristics, Theory and Modeling of the Transistor Laser","abstract":"The transistor laser possesses advantageous characteristics of fast base spontaneous carrier lifetime, high differential optical gain, and unique three-terminal electrical-optical characteristics for direct “read-out” of its optical properties. These potentially lead to advantageous and useful features for designing high-speed optical transmitters that operate without the limitations of resonance, a feature common in the operation of semiconductor (two-terminal) diode lasers. The characteristics of the transistor laser are studied by considering the charge transport, and the coupling of the photon and quantum-mechanical electron-hole recombination dynamics in the operation of the transistor laser. An analytical understanding of these physical characteristics is developed based on experimental data, and a computational model of the transistor laser is developed for device engineering and circuit design applications.","abstract_html":"The transistor laser possesses advantageous characteristics of fast base spontaneous carrier lifetime, high differential optical gain, and unique three-terminal electrical-optical characteristics for direct “read-out” of its optical properties. These potentially lead to advantageous and useful features for designing high-speed optical transmitters that operate without the limitations of resonance, a feature common in the operation of semiconductor (two-terminal) diode lasers. The characteristics of the transistor laser are studied by considering the charge transport, and the coupling of the photon and quantum-mechanical electron-hole recombination dynamics in the operation of the transistor laser. An analytical understanding of these physical characteristics is developed based on experimental data, and a computational model of the transistor laser is developed for device engineering and circuit design applications.","abstract_has_math":false,"creators":["Then, Han Wui"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Electrical & Computer Engr","degree_department":null,"school":null,"contributors":["Feng, Milton","Holonyak, Nick, Jr.","Cheng, Keh-Yung","Jin, Jianming","Hsieh, Kuang-Chien"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2010,"date_issued":"2010-01-06T17:48:34Z","date_published":"2010-01-06T17:48:34Z","updated_at":"2026-07-22T22:25:08Z","subjects":["transistor laser","light-emitting transistor","Heterojunction Bipolar Transistor (HBT)","Diode Laser","Quantum Well","differential gain","recombination","current gain","tunnel junction"],"languages":["en"],"rights":["Copyright 2009 Han Wui Then"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/14740","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Feng, Milton","Holonyak, Nick, Jr.","Cheng, Keh-Yung","Jin, Jianming","Hsieh, Kuang-Chien"]},{"key":"dc:creator","label":"Author","values":["Then, Han Wui"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2010-01-06T17:48:34Z","2012-01-07T11:00:11Z","2009-12"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["transistor laser","light-emitting transistor","Heterojunction Bipolar Transistor (HBT)","Diode Laser","Quantum Well","differential gain","recombination","current gain","tunnel junction"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2009 Han Wui Then"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/14740"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["The transistor laser possesses advantageous characteristics of fast base spontaneous carrier lifetime, high differential optical gain, and unique three-terminal electrical-optical characteristics for direct “read-out” of its optical properties. 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