Growth and Characterization of III-V Semiconductor Materials for MOCVD Reactor Qualification and Process Control

Metalorganic chemical vapor deposition is examined as a technique for growing compound semiconductor structures. Material analysis techniques for characterizing the quality and properties of compound semiconductor material are explained and data from recent commissioning work on a newly installed reactor at the University of Illinois is presented.

Name thesis:degree_name

M.S.

Level thesis:degree_level

Thesis

Discipline thesis:degree_discipline

Electrical & Computer Engr

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2010

Author dc:creator

• Bassett, Kevin P.

Contributors dc:contributor

• Li, Xiuling

• Metal-organic chemical vapor deposition (MOCVD)
• Organometallic vapor phase epitaxy (OMVPE)
• Metalorganic vapour phase epitaxy (MOVPE)

Statement dc:rights

• Copyright 2009 Kevin P. Bassett

Language dc:language

en

Handle dc:identifier

http://hdl.handle.net/2142/14733

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/14733