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Showing 1 to 20 of 127 for “"MOCVD"”.
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MOCVD GaN sensorių su chemiškai modifikuotu paviršiumi tyrimai /
… based on photoelectric phenomena. In the thesis MOCVD grown GaN was chosed as the main analysis subject, since it has a lot of research potential in the subjects of space physics, medicine and particle physics, due its ability to detect both electrical and optical signals. The main goal of this …
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MOCVD nitridinių p-i-n struktūrų formavimas spinduliuotės jutikliams /
Gallium nitride (GaN) is a promising material for next generation electronic and photonic devices. GaN has a wide direct bandgap (3,4 eV) which is tunable from infrared to ultraviolet spectrum by mixing nitride with additional group III elements. Its superior material properties such as high …
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MOCVD growth and doping studies of III/V semiconductors
Contains fulltext : mmubn000001_160060796.pdf (Publisher’s version ) (Open Access)
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GaN grown on SiC by MOCVD: Material for HEMT applications
Contains fulltext : 147009.pdf (Publisher’s version ) (Open Access)
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Epitaxial Ge/Il-V Heterostructures : MOCVD growth, characterization, and applications
Epitaxial Ge thin films are being investigated for many important roles in next generation microelectronics. Metal-oxide-semiconductor field effect transistors (MOSFETs) utilizing Ge channels have demonstrated dramatic performance enhancements over Si based technology. Theoretical studies have …
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MOCVD growth of In GaP-based heterostructures for light emitting devices
… via metalorganic chemical vapor deposition (MOCVD). In particular, we realize improvements in the epitaxial integration of high-quality InGaP device materials on non-standard platforms, such as GeSi graded buffers orSi substrates, and InGaP or indium aluminum gallium phosphide (InAlGaP) …
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Growth and application of planar III-V semiconductor nanowires grown with MOCVD
The semiconductor nanowire has been widely studied over the past decade and identified as a promising nanotechnology building block with application in photonics and electronics. The flexible bottom-up approach to nanowire growth allows for straightforward fabrication of complex 1D nanostructures …
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High performance MoS₂ transistors based on wafer-scale low-temperature MOCVD synthesis
… metal organic chemical vapor deposition (MOCVD) method for the synthesis of 2D transition metal dichalcogenide materials with growth temperature lower than 400°C. Highly-scaled high-performance MoS₂ transistors will also be investigated with different contact engineering methods. These …
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Self-seeded II-V semiconductor nanowire growth by metal-organic chemical vapor deposition (MOCVD)
… such as metal-organic chemical vapor deposition (MOCVD). Therefore, the novelty of non-planar morphology can be achieved using industrial scale high throughput deposition techniques. To realize the full potential of nanowires as building blocks in a range of different devices, growth of nanowire …
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Microstructural Evolution in Mocvd-Derived Tantalum-Doped Tin Dioxide Thin Films and Subsequent Property Changes
… the metal-organic chemical vapor deposition (MOCVD) technique. The main focus of this study was to understand the structure-property relationship in the Ta-Sn-O material system. Microstructure of the films was characterized through x-ray diffraction (XRD), secondary ion mass spectroscopy …
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Growth and Characterization of III-V Semiconductor Materials for MOCVD Reactor Qualification and Process Control
Metalorganic chemical vapor deposition is examined as a technique for growing compound semiconductor structures. Material analysis techniques for characterizing the quality and properties of compound semiconductor material are explained and data from recent commissioning work on a newly installed …
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The effects of rapid thermal annealing on gallium arsenide grown by MOCVD on silicon substrates
Thesis: M.S., Massachusetts Institute of Technology, Department of Materials Science and Engineering, 1988
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In-situ deposition of high-k dielectrics on III-V compound semiconductor in MOCVD system
… GaAs in metal organic chemical vapor deposition (MOCVD) system was well demonstrated. Both atomic layer deposition (ALD) and chemical vapor deposition (CVD) methods were applied in this research. The CVD aluminum nitride (AIN) was first selected to be in situ deposited on GaAs surface by using …
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Novel process and apparatus design for metalorganic chemical vapor deposition (MOCVD) of superconducting thin films
… too slow to be commercially viable; liquidsource MOCVD systems can be precisely controlled, but the solvents they require tend to kill superconducting oxides; and solid-source MOCVD systems suffer from imprecise process control, thermal degradation of precursor materials, or both. A simple and …
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Structural and Electromagnetic Study of Heavily Doped ZR-Added REBCO Coated Conductors Fabricated by Reel-To-Reel MOCVD
… Metal Organic Chemical Vapor Deposition (MOCVD) method to systematically investigate the self-assembled BZO generated nanorods and the influence of increased Zr content on the texture and superconducting properties. The optimal composition range of 15 and 25 mol.% Zr-added REBCO to achieve …
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The growth of aluminum gallium arsenide/gallium arsenide graded barrier quantum well heterostructure lasers on planar and nonplanar substrates by metalorganic chemical vapor deposition
Metalorganic chemical vapor deposition (MOCVD) is a crystal growth technique which has demonstrated the capacity to deposit epitaxial layers possessing the high levels of crystalline quality and material purity required for the fabrication of state of the art devices in a variety of material …
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