Fluidic characterization of electric field sensitivity of Ti-GaAs Schottky junction gated field-effect biosensors

This thesis reports the electric field sensitivity of fluid gated metalsemiconductor hybrid (MSH) Schottky structures consisting of a Titanium layer on ntype GaAs. Compared to standard field-effect sensors, the MSH Schottky structures show 21 times larger resistance change with electric field at -46.6 V/cm. The fluidic gate voltages are mirrored by the metal shunt, resulting in larger depletion widths under the Schottky junction and resistance change as compared to devices with no Schottky junction. Two-dimensional numerical simulation results are in good agreement with the measured data, and a thinner mesa with lower doping density can further increase sensor sensitivity. These metal-semiconductor hybrid (MSH) Schottky sensors are thus very promising for label-free biosensing.

Name thesis:degree_name

M.S.

Level thesis:degree_level

Thesis

Discipline thesis:degree_discipline

Electrical & Computer Engr

Grantor

University of Illinois at Urbana-Champaign

Year dc:date

2010

Author dc:creator

• Suk, Ho-Jun

Contributors dc:contributor

• Bashir, Rashid

• Metal semiconductor hybrid
• biosensor
• electric field sensing
• Schottky junction

Statement dc:rights

• Copyright 2009 Ho-Jun Suk

Language dc:language

en

Handle dc:identifier

http://hdl.handle.net/2142/14677

OAI identifier oai:identifier

oai:www.ideals.illinois.edu:2142/14677