{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/14677"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/14677","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Fluidic characterization of electric field sensitivity of Ti-GaAs Schottky junction gated field-effect biosensors","abstract":"This thesis reports the electric field sensitivity of fluid gated metalsemiconductor hybrid (MSH) Schottky structures consisting of a Titanium layer on ntype GaAs. Compared to standard field-effect sensors, the MSH Schottky structures show 21 times larger resistance change with electric field at -46.6 V/cm. The fluidic gate voltages are mirrored by the metal shunt, resulting in larger depletion widths under the Schottky junction and resistance change as compared to devices with no Schottky junction. Two-dimensional numerical simulation results are in good agreement with the measured data, and a thinner mesa with lower doping density can further increase sensor sensitivity. These metal-semiconductor hybrid (MSH) Schottky sensors are thus very promising for label-free biosensing.","abstract_html":"This thesis reports the electric field sensitivity of fluid gated metalsemiconductor hybrid (MSH) Schottky structures consisting of a Titanium layer on ntype GaAs. Compared to standard field-effect sensors, the MSH Schottky structures show 21 times larger resistance change with electric field at -46.6 V/cm. The fluidic gate voltages are mirrored by the metal shunt, resulting in larger depletion widths under the Schottky junction and resistance change as compared to devices with no Schottky junction. Two-dimensional numerical simulation results are in good agreement with the measured data, and a thinner mesa with lower doping density can further increase sensor sensitivity. These metal-semiconductor hybrid (MSH) Schottky sensors are thus very promising for label-free biosensing.","abstract_has_math":false,"creators":["Suk, Ho-Jun"],"institution":"University of Illinois at Urbana-Champaign","degree_name":"M.S.","degree_level":"Thesis","degree_discipline":"Electrical & Computer Engr","degree_department":null,"school":null,"contributors":["Bashir, Rashid"],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2010,"date_issued":"2010-01-06T16:21:05Z","date_published":"2010-01-06T16:21:05Z","updated_at":"2026-07-22T22:25:08Z","subjects":["Metal semiconductor hybrid","biosensor","electric field sensing","Schottky junction"],"languages":["en"],"rights":["Copyright 2009 Ho-Jun Suk"],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/14677","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Bashir, Rashid"]},{"key":"dc:creator","label":"Author","values":["Suk, Ho-Jun"]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2010-01-06T16:21:05Z","2009-12"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Electrical & Computer Engr"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Thesis"]},{"key":"thesis:degree_name","label":"Degree Name","values":["M.S."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["Metal semiconductor hybrid","biosensor","electric field sensing","Schottky junction"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]},{"key":"dc:rights","label":"Dc Rights","values":["Copyright 2009 Ho-Jun Suk"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/14677"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["This thesis reports the electric field sensitivity of fluid gated metalsemiconductor hybrid (MSH) Schottky structures consisting of a Titanium layer on ntype GaAs. Compared to standard field-effect sensors, the MSH Schottky structures show 21 times larger resistance change with electric field at -46.6 V/cm. The fluidic gate voltages are mirrored by the metal shunt, resulting in larger depletion widths under the Schottky junction and resistance change as compared to devices with no Schottky junction. Two-dimensional numerical simulation results are in good agreement with the measured data, and a thinner mesa with lower doping density can further increase sensor sensitivity. 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The fluidic gate voltages are mirrored by the metal shunt, resulting in larger depletion widths under the Schottky junction and resistance change as compared to devices with no Schottky junction. Two-dimensional numerical simulation results are in good agreement with the measured data, and a thinner mesa with lower doping density can further increase sensor sensitivity. These metal-semiconductor hybrid (MSH) Schottky sensors are thus very promising for label-free biosensing.","Item withdrawn by Mark Zulauf (zulauf@illinois.edu) on 2009-12-08T20:22:30Z Item was in collections: University of Illinois Theses & Dissertations (ID: 1) No. of bitstreams: 2 Suk_Ho-Jun.pdf: 1917479 bytes, checksum: 0ee31879837561aec192e989f8383294 (MD5) Suk_Ho-Jun.doc: 7473664 bytes, checksum: 32f583d6a2107b0ece4d14061a563a1e (MD5)","Made available in DSpace on 2010-01-06T16:21:05Z (GMT). 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