University of Illinois at Urbana-Champaign
Low-Temperature Chemical Vapor Deposition of Ruthenium and Manganese Nitride Thin Films
Abstract
dc:descriptionMaterials and thin film processing development has been and remains key to continuing to make ever smaller, or miniaturized, microelectronic devices. In order to continue miniaturization, conformal, low-temperature deposition of new electronic materials is needed. Two techniques capable of conformality have emerged: chemical vapor deposition (CVD) and atomic layer deposition (ALD). Here, two processes for deposition of materials which could be useful in microelectronics, but for which no low-temperature, conformal process has been established as commercializable, are presented. One is ruthenium, intended for use in interconnects and in dynamic random access memory electrodes, a known material for use in microelectronics but for which a more conformal, yet fast process than previously demonstrated is required. The other is manganese nitride, which could be used as active magnetic layers in devices or as a dopant in materials for spintronics, which is not yet established as a desired material in part due to the lack of any previously known CVD or ALD process for deposition.
Degree
thesis:*- Name thesis:degree_name
- Ph.D.
- Level thesis:degree_level
- Dissertation
- Discipline thesis:degree_discipline
- Materials Science and Engineering
- Grantor
- University of Illinois at Urbana-Champaign
- Year dc:date
- 2009
Author and committee
dc:creator, dc:contributor.*- Author dc:creator
-
- Lazarz, Teresa S.
- Contributors dc:contributor
-
- Abelson, John R.
- Girolami, Gregory S.
- Rockett, Angus A.
- Braun, Paul V.
- Earles, Susan K.
Subjects
dc:subject × 6Rights
- Language dc:language
- en
Identifiers
dc:identifier.*- Handle dc:identifier
- http://hdl.handle.net/2142/13834
- OAI identifier oai:identifier
- oai:www.ideals.illinois.edu:2142/13834