{"id":{"repo_id":"uiuc","oai_identifier":"oai:www.ideals.illinois.edu:2142/13834"},"canonical_url":"https://search.dev.ndltd.org/etd/uiuc/oai:www.ideals.illinois.edu:2142/13834","repository":{"repo_id":"uiuc","name":"University of Illinois - Urbana-Champaign","base_url":"https://www.ideals.illinois.edu/oai-pmh"},"display":{"title":"Low-Temperature Chemical Vapor Deposition of Ruthenium and Manganese Nitride Thin Films","abstract":"Materials and thin film processing development has been and remains key to continuing to make ever smaller, or miniaturized, microelectronic devices. In order to continue miniaturization, conformal, low-temperature deposition of new electronic materials is needed. Two techniques capable of conformality have emerged: chemical vapor deposition (CVD) and atomic layer deposition (ALD). Here, two processes for deposition of materials which could be useful in microelectronics, but for which no low-temperature, conformal process has been established as commercializable, are presented. One is ruthenium, intended for use in interconnects and in dynamic random access memory electrodes, a known material for use in microelectronics but for which a more conformal, yet fast process than previously demonstrated is required. The other is manganese nitride, which could be used as active magnetic layers in devices or as a dopant in materials for spintronics, which is not yet established as a desired material in part due to the lack of any previously known CVD or ALD process for deposition.","abstract_html":"Materials and thin film processing development has been and remains key to continuing to make ever smaller, or miniaturized, microelectronic devices. In order to continue miniaturization, conformal, low-temperature deposition of new electronic materials is needed. Two techniques capable of conformality have emerged: chemical vapor deposition (CVD) and atomic layer deposition (ALD). Here, two processes for deposition of materials which could be useful in microelectronics, but for which no low-temperature, conformal process has been established as commercializable, are presented. One is ruthenium, intended for use in interconnects and in dynamic random access memory electrodes, a known material for use in microelectronics but for which a more conformal, yet fast process than previously demonstrated is required. The other is manganese nitride, which could be used as active magnetic layers in devices or as a dopant in materials for spintronics, which is not yet established as a desired material in part due to the lack of any previously known CVD or ALD process for deposition.","abstract_has_math":false,"creators":["Lazarz, Teresa S."],"institution":"University of Illinois at Urbana-Champaign","degree_name":"Ph.D.","degree_level":"Dissertation","degree_discipline":"Materials Science and Engineering","degree_department":null,"school":null,"contributors":["Abelson, John R.","Girolami, Gregory S.","Rockett, Angus A.","Braun, Paul V.","Earles, Susan K."],"advisors":[],"committee_chairs":[],"committee_members":[],"year":2009,"date_issued":"2009-09-25T21:12:40Z","date_published":"2009-09-25T21:12:40Z","updated_at":"2026-07-22T22:25:07Z","subjects":["chemical vapor deposition (CVD)","ruthenium","manganese nitride","Ru","Mn-N","film deposition"],"languages":["en"],"rights":[],"rights_urls":[],"identifier_entries":[]},"links":{"outbound_url":"http://hdl.handle.net/2142/13834","outbound_label":"Handle","outbound_source":"dc:identifier"},"metadata_groups":[{"id":"people","label":"People","entries":[{"key":"dc:contributor","label":"Contributor","values":["Abelson, John R.","Girolami, Gregory S.","Rockett, Angus A.","Braun, Paul V.","Earles, Susan K."]},{"key":"dc:creator","label":"Author","values":["Lazarz, Teresa S."]}]},{"id":"academic_context","label":"Academic Context","entries":[{"key":"dc:date","label":"Dc Date","values":["2009-09-25T21:12:40Z","2009-09-25"]},{"key":"dc:type","label":"Dc Type","values":["Dissertation / Thesis","text"]},{"key":"thesis:degree_discipline","label":"Discipline","values":["Materials Science and Engineering"]},{"key":"thesis:degree_level","label":"Degree Level","values":["Dissertation"]},{"key":"thesis:degree_name","label":"Degree Name","values":["Ph.D."]},{"key":"thesis:institution_name","label":"Thesis Institution Name","values":["University of Illinois at Urbana-Champaign"]}]},{"id":"subjects_keywords","label":"Subjects and Keywords","entries":[{"key":"dc:subject","label":"Dc Subject","values":["chemical vapor deposition (CVD)","ruthenium","manganese nitride","Ru","Mn-N","film deposition"]}]},{"id":"language_rights","label":"Language and Rights","entries":[{"key":"dc:language","label":"Dc Language","values":["en"]}]},{"id":"identifiers","label":"Identifiers","entries":[{"key":"dc:identifier","label":"Identifier","values":["http://hdl.handle.net/2142/13834"]}]},{"id":"additional","label":"Additional Metadata","entries":[{"key":"dc:description","label":"Description","values":["Materials and thin film processing development has been and remains key to continuing to make ever smaller, or miniaturized, microelectronic devices. In order to continue miniaturization, conformal, low-temperature deposition of new electronic materials is needed. Two techniques capable of conformality have emerged: chemical vapor deposition (CVD) and atomic layer deposition (ALD). Here, two processes for deposition of materials which could be useful in microelectronics, but for which no low-temperature, conformal process has been established as commercializable, are presented. One is ruthenium, intended for use in interconnects and in dynamic random access memory electrodes, a known material for use in microelectronics but for which a more conformal, yet fast process than previously demonstrated is required. 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No. of bitstreams: 1 TL_Thesis_Bound.pdf: 1741385 bytes, checksum: 64f61d6823126283b9606885592d01a0 (MD5) Previous issue date: 2009-09-25","unpublished"]},{"key":"dc:title","label":"Title","values":["Low-Temperature Chemical Vapor Deposition of Ruthenium and Manganese Nitride Thin Films"]}]}],"canonical_facts":{"dc:contributor":["Abelson, John R.","Girolami, Gregory S.","Rockett, Angus A.","Braun, Paul V.","Earles, Susan K."],"dc:creator":["Lazarz, Teresa S."],"dc:date":["2009-09-25T21:12:40Z","2009-09-25"],"dc:description":["Materials and thin film processing development has been and remains key to continuing to make ever smaller, or miniaturized, microelectronic devices. In order to continue miniaturization, conformal, low-temperature deposition of new electronic materials is needed. Two techniques capable of conformality have emerged: chemical vapor deposition (CVD) and atomic layer deposition (ALD). Here, two processes for deposition of materials which could be useful in microelectronics, but for which no low-temperature, conformal process has been established as commercializable, are presented. One is ruthenium, intended for use in interconnects and in dynamic random access memory electrodes, a known material for use in microelectronics but for which a more conformal, yet fast process than previously demonstrated is required. 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No. of bitstreams: 1 TL_Thesis_Bound.pdf: 1741385 bytes, checksum: 64f61d6823126283b9606885592d01a0 (MD5) Previous issue date: 2009-09-25","unpublished"],"dc:identifier":["http://hdl.handle.net/2142/13834"],"dc:language":["en"],"dc:subject":["chemical vapor deposition (CVD)","ruthenium","manganese nitride","Ru","Mn-N","film deposition"],"dc:title":["Low-Temperature Chemical Vapor Deposition of Ruthenium and Manganese Nitride Thin Films"],"dc:type":["Dissertation / Thesis","text"],"thesis:degree_discipline":["Materials Science and Engineering"],"thesis:degree_level":["Dissertation"],"thesis:degree_name":["Ph.D."],"thesis:institution_name":["University of Illinois at Urbana-Champaign"]},"updated_at":"2026-07-22T22:25:07Z"}